Hydrogen induced promotion of nanocrystallization from He-diluted SiH 4 plasma

Journal of Physics D: Applied Physics

Volumn 41, Issue 8, 2008, Pages

  Raha, Debnath ^a   Das, Debajyoti ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; HELIUM; HYDROGENATION; PLASMA THEORY; SILANES;

HETEROGENEOUS STRUCTURE; HIGH GROWTH RATE; NANOCRYSTALLIZATION PROCESS;

NANOCRYSTALLIZATION;

EID: 42549158890     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/8/085303     Document Type: Article

References (39)

1. Uchida Y, Ichimura T, Ueno M and Haruki H 1986 Japan. J. Appl. Phys. 21 L586
2. Chen Y and Wagner S 1999 Appl. Phys. Lett. 75 1125
3. Ishihara S, He D, Nakata M and Shimizu I 1993 Japan. J. Appl. Phys. 32 1539
4. Lubianiker Y, Cohen J D, Jin H and Abelson J R 1999 Phys. Rev. B 60 4434
5. Prasad K, Finger F, Dubail S, Shah A and Schubert M 1991 J. Non-Cryst. Solids 137&138 681
6. Sankaran R M, Holunga D, Flagan R C and Giapis K P 2005 Nano Lett. 5 537
7. Mangolini L, Thimsen E and Kortshagen U 2005 Nanolett. 5 655
8. Jurbergs D, Rogojina E, Mangolini L and Kortshagen U 2006 Appl. Phys. Lett. 88 233116
9. Walters R J, Kik P G, Casperson J D, Atwater H A, Lindstedt R, Giorgi M and Bourianoff G 2004 Appl. Phys. Lett. 85 2622
10. Roca i Cabarrocas P, Nguyen-Tran Th, Djeridane Y, Abramov A, Johnson E and Patriarche G 2007 J. Phys. D: Appl. Phys. 40 2258
11. Das D 1995 Solid State Phenomena, Special Volume on Hydrogenated Amorphous Silicon, ScitecPublication, Switzerland vol 44-46 (Switzerland: Scitec Publication) p 227
12. Das D 2003 J. Phys. D: Appl. Phys. 36 2335
13. Hollenstein Ch, Schwarzenbach W, Howling A A, Courteille C, Dorier J L and Sansonnens L 1996 J. Vac. Sci. Technol. A 14 535
14. Luysberg M, Hapke P, Carius R and Finger F 1997 Phil. Mag. A 75 31
15. Knights J C and Lujan R A 1979 Appl. Phys. Lett. 35 244
16. Stoffels E, Stoffels W W, Koresen G M W and de Hoog F J 1996 J. Vac. Sci. Technol. A 14 56
17. Matsuda A, Mashima S, Hasezaki K, Suzuki A, Yamasaki S and McElheny P J 1991 Appl. Phys. Lett. 58 2494
18. Das D, Jana M and Barua A K 2001 J. Appl. Phys. 89 3041
19. Jana M, Das D and Barua A K 2002 J. Appl. Phys. 91 5442
20. Lee S, Heo D, Kang J, Park Y and Rhee S 1998 J. Electrochem. Soc. 145 2900
21. Fontcuberta i Morral A, Brenot R, Hamers E A G, Vanderhaghen R and Roca i Cabarrocas P 2000 J. Non-Cryst. Solids 266-269 48
22. Carabe J, Gandia J J, Gonzalez N, Rodriguez A and Guitierrez M T 1999 Appl. Surf. Sci. 75 492
23. Jang J, Kim S, Park K C and Ki Kim S 1994 J. Appl. Phys. 75 3184
24. Das D and Bhattacharya K 2007 Japan. J. Appl. Phys. 46 L1006
25. Bhattacharya K and Das D 2007 Nanotechnology 18 415704
26. Ambrosone G, Coscia U, Murri R, Pinto N, Ficcadenti M and Morresi L 2005 Sol. Energy Mater. Sol. Cells 87 375
27. Tauc J 1974 Amorphous and Liquid Semiconductors (New York: Plenum) p 159
28. Shanks H, Fang C J, Ley L, Cardona M, Demond F J and Kalbitzer S 1980 Phys. Status. Solidi b 100 43
29. Veprek S, Sarott F A and Iqbal Z 1987 Phys. Rev. B 36 3344
30. Mavi H S, Shukla A K, Abbi S C and Jain K P 1989 J. Appl. Phys. 66 5322
31. He Y, Wei Y, Zheng G, Yu M and Liu M 1997 J. Appl. Phys. 82 3408
32. Yue G, Lorentzen J D, Lin J, Han D and Wang Q 1999 Appl. Phys. Lett. 75 492
33. Kamiya T, Nakahata K, Tan Y T, Durrani Z A K and Shimizu I 2001 J. Appl. Phys. 89 6265
34. Bohm C and Perrin J 1991 J. Phys. D: Appl. Phys. 24 865
35. Lisovskiy V, Booth J-P, Landry K, Douai D, Cassagne V and Yegorenkov V 2007 J. Phys. D: Appl. Phys. 40 6631
36. Matsuda A 1983 J. Non-Cryst. Solids 59/60 767
37. Veprek S 1990 Mater. Res. Soc. Symp. Proc. 164 39
38. Nanamura N, Yoshida K, Takeoka S and Shimizu I 1995 Japan. J. Appl. Phys. 34 442
39. Das D 1995 Phys. Rev. B 51 10729