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Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 5, 2010, Pages 1245-1248

Threshold voltage shift under electrical stress in amorphous, polymorphous, and microcrystalline silicon bottom gate thin-film transistors

(6) Oudwan, Maher a Moustapha, Oumkelthoum a Abramov, Alexey a Daineka, Dmitriy a Bonnassieux, Yvan a Cabarrocas, Pere Roca I a

a ECOLE POLYTECHNIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM GATE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PARAMETER; ELECTRICAL STRESS; HYDROGEN PLASMAS; INTRINSIC LAYER; NITROGEN PLASMA TREATMENT; POLYMORPHOUS SILICON; SUBTHRESHOLD SLOPE; THRESHOLD VOLTAGE SHIFTS;

AMORPHOUS FILMS; GATE DIELECTRICS; GATES (TRANSISTOR); MICROCRYSTALLINE SILICON; NITROGEN PLASMA; PLASMA APPLICATIONS; PLASMA STABILITY; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

AMORPHOUS SILICON;

EID: 77952732679 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200925403 Document Type: Conference Paper

Times cited : (10)

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