Effect of power on the growth of nanocrystalline silicon films

Journal of Physics Condensed Matter

Volumn 20, Issue 33, 2008, Pages

  Kumar, Sushil ^a   Dixit, P N ^a   Rauthan, C M S ^a   Parashar, A ^a   Gope, Jhuma ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ARGON; ELECTRIC CONDUCTIVITY; HYDROGEN; INERT GASES; METALLIC FILMS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOCRYSTALLINE SILICON; NANOCRYSTALLITES; NANOSTRUCTURED MATERIALS; NONMETALS; OPTICAL CONDUCTIVITY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POWER QUALITY; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON; THICK FILMS;

AMORPHOUS MATRIXES; ATOMIC FORCES; BANDGAP; CHEMICAL VAPORS; DEVICE QUALITIES; ELECTRICAL CONDUCTIVITIES; GASEOUS MIXTURES; HYDROGENATED AMORPHOUS SILICON FILMS; LASER RAMAN; LOW POWERS; NANOCRYSTALLINE PHASES; NANOCRYSTALLINE SILICON FILMS; OPTICAL-; PHOTOLUMINESCENCE PEAKS; POWER ON;

AMORPHOUS FILMS;

EID: 56449106124     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/33/335215     Document Type: Article

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