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Volumn 107, Issue 10, 2010, Pages

Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

(5) Tang, H a Fang, Z Q b Rolfe, S a Bardwell, J A a Raymond, S a

a NATIONAL RESEARCH COUNCIL CANADA (Canada)

b WRIGHT STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM EQUIVALENT PRESSURE; DEEP-LEVEL DEFECTS; EXPERIMENTAL STUDIES; GAN MATERIAL; GROWTH CONDITIONS; GROWTH MECHANISMS; GROWTH REGIME; LAYER-BY-LAYER GROWTH; OXYGEN INCORPORATION; ROOM TEMPERATURE; SEMI-INSULATING; SEMI-INSULATING GAAS; SEMI-INSULATING GAN; SHALLOW DONORS; SURFACE ADSORPTION; SURFACE KINETICS;

ACTIVATION ENERGY; ADSORPTION; AMMONIA; ARSENIC; CRYSTAL GROWTH; ELECTRONIC PROPERTIES; FERMI LEVEL; FERMIONS; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAMS; OXYGEN; SAPPHIRE; SILICON CARBIDE; TWO DIMENSIONAL;

GROWTH KINETICS;

EID: 77952969065 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3415527 Document Type: Article

Times cited : (28)

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