Deep centers in semi-insulating Fe-doped native GaN substrates grown by hydride vapour phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1508-1511

  Fang, Z Q ^a   Claflin, B ^a   Look, D C ^a   Elhamri, S ^b   Smith, H E ^b   Mitchel, W C ^b   Hanser, D ^c   Preble, E A ^c   Evans, K R ^c  

^a WRIGHT STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c KYMA TECHNOLOGIES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-CENTER; ELECTRICAL PROPERTY; FE-DOPED; GAN SUBSTRATE; HALL EFFECT MEASUREMENT; HIGH RESISTIVITY; HYDRIDE VAPOR PHASE EPITAXY; HYDRIDE VAPOUR PHASE EPITAXIES; SECONDARY ION MASS SPECTROSCOPY; SEMI-INSULATING; TEMPERATURE DEPENDENT; THERMALLY STIMULATED CURRENT SPECTROSCOPY; WHITE-LIGHT ILLUMINATION;

CRYSTAL GROWTH; ELECTRIC PROPERTIES; GALLIUM NITRIDE; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; VAPOR PHASE EPITAXY;

GALLIUM ALLOYS;

EID: 69649097633     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778430     Document Type: Conference Paper

References (8)

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