Mechanisms of ammonia-MBE growth of GaN on SiC for transport devices

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2091-2095

  Tang, H ^a   Rolfe, S ^a   Semond, F ^a   Bardwell, J A ^a   Baribeau, J M ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B3. High electron mobility transistors

Indexed keywords

AMMONIA; CRYSTAL GROWTH; CRYSTAL IMPURITIES; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OXYGEN; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON CARBIDE; TWO DIMENSIONAL;

3-D GROWTHS; A3. MOLECULAR BEAM EPITAXY; AMMONIA-MOLECULAR-BEAM EPITAXIES; B1. NITRIDES; B3. HIGH-ELECTRON MOBILITY TRANSISTORS; BUFFER STRUCTURES; COMPRESSIVE STRAINS; CRACK-FREE; CRYSTAL QUALITIES; GROWTH MECHANISMS; GROWTH OF GAN; GROWTH PARAMETERS; GROWTH REGIMES; HIGH QUALITIES; HIGH TEMPERATURES; IMPURITY INCORPORATIONS; LOW OXYGEN IMPURITIES; LOW STRAINS; MBE GROWTHS; MODERATE TEMPERATURES; MULTI-LAYERED; SIC SUBSTRATES; SMOOTH INTERFACES; STRAIN RELIEFS; STRAIN STATE;

TENSILE STRAIN;

EID: 63349091952     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.052     Document Type: Article

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