메뉴 건너뛰기




Volumn 289, Issue 2, 2006, Pages 587-595

Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy

Author keywords

A1. Doping; A1. Segregation; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; GROWTH KINETICS; MOLECULAR BEAM EPITAXY; NITRIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

EID: 33644850063     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.084     Document Type: Article
Times cited : (24)

References (32)
  • 26
    • 33644868562 scopus 로고    scopus 로고
    • Joint Committee on Powder Diffraction Standards (JCPDS) File No. 44-0824
    • Joint Committee on Powder Diffraction Standards (JCPDS) File No. 44-0824.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.