Strain and microstructure in Fe-doped GaN layers grown by low pressure metalorganic vapour phase epitaxy

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1744-1748

  Azize, M ^a,b   Leroux, M ^a   Laugt, M ^a   Gibart, P ^a   Bougrioua, Z ^a  

^a CRHEA CNRS   (France)

^b LUMILOG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS DOPING (CD); CRYSTALLINE QUALITY; DISLOCATION DENSITY; DOPING MODE;

DOPING (ADDITIVES); IRON; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; MICROSTRUCTURE; PHOTOLUMINESCENCE; SAPPHIRE; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 33745087215     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565341     Document Type: Article

References (14)

1. E. Frayssinet et al., J. Nitride Semicond. Res. 7, 8 (2002).
2. S. Heikman, S. Keller, S. P. DenBarrs, and U. K. Mishra, Appl. Phys. Lett. 81, 489 (2002).
3. Z. Bougrioua, M. Azize, P. Lorenzini, M. Laügh, and H. Haas, phys. stat. sol. (a) 202(4), 536 (2005).
4. M. Azize, Z. Bougrioua, P. Girard, and P. Gibart, phys. stat. sol. (c) 2(5), 2153 (2005).
5. S. Heikman, S. Keller, T. Mates, S. P. DenBaars, and U. K. Mishra, J. Cryst. Growth 248, 513 (2003).
6. M. Leszczynski et al., Gallium Nitride and Related Compounds (EMIS Datareviews Series).
7. C. Kisielowski et al., Phys. Rev. B 54, 17745 (1996).
8. C. G. Van de Walle, Phys. Rev. B 68, 165209 (2003).
9. L. Pauling, The Chemical Bond (Cornell University Press, Ithaca, 1967).
10. H. Lahrèche, M. Leroux, M. Laügt, M. Vaille, B. Beaumont, and P. Gibart, J. Appl. Phys. 87, 577 (2000).
11. M. Leroux et al., Mater. Sci. Forum 353-356, 795 (2001).
12. T. Metzger et al., Philos. Mag. A 77(4), 1013 (1998).
13. B. J. Ryan, M. O. Henry, E. Mc Glynn, and J. Friar, Physica B 340-342, 452 (2003).
14. C. G. Van de Walle, C. Stampfl, and J. Neugebauer, J. Cryst. Growth 189/190, 505 (1998).