Resistivity control in unintentionally doped GaN films grown by MOCVD

Journal of Crystal Growth

Volumn 260, Issue 1-2, 2004, Pages 54-62

  Wickenden, A E ^a,b   Koleske, D D ^a,c   Henry, R L ^a   Twigg, M E ^a   Fatemi, M ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

A1. Compensation; A1. Impurities; A1. Threading dislocations; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting gallium nitride

Indexed keywords

ELECTRIC BREAKDOWN; GRAIN SIZE AND SHAPE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

THREADING DISLOCATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0242607877     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.08.024     Document Type: Article

References (33)

1. Thomas R.N., McGuigan S., Eldridge G.W., Barrett D.L. Proc. IEEE. 76:1988;778.
2. Beadie G., Rabinovich W.S., Wickenden A.E., Koleske D.D., Binari S.C., Freitas J.A. Jr. Appl. Phys. Lett. 71:1997;1092.
3. Binari S.C., Ikossi K., Roussos J.A., Kruppa W., Park D., Dietrich H.B., Koleske D.D., Wickenden A.E., Henry R.L. IEEE Trans. Electron. Dev. 48:2001;465.
4. Klein P.B., Binari S.C., Freitas J.A. Jr., Wickenden A.E. J. Appl. Phys. 88:2000;2843.
5. Huang Z.C., Chen J.C., Wickenden D.K. J. Crystal Growth. 170:1997;362.
6. Hiramatsu K., Itoh S., Amano H., Akasaki I., Kuwano N., Shiraishi T., Oki K. J. Crystal Growth. 115:1991;628.
7. Akasaki I., Amano H., Koide Y., Hiramatsu K., Sawaki H. J. Crystal Growth. 98:1989;209.
8. Koleske D.D., Wickenden A.E., Henry R.L., Twigg M.E. J. Crystal Growth. 242:2002;55.
9. Saarinen K., Seppala P., Oila J., Hautojarvi P., Corbel C. Appl. Phys. Lett. 73:1998;3253.
10. Twigg M.E., Koleske D.D., Wickenden A.E., Henry R.L., Fatemi M., Culbertson J.C. Structural defects in nitride heteroepitaxy. Manasreh O. III-V Nitride Semiconductors: Electrical, Structural and Defect Properties. 2000;Gordon and Breach, London. (Chapter 15).
11. Koleske D.D., Henry R.L., Twigg M.E., Culbertson J.C., Binari S.C., Wickenden A.E., Fatemi M. Appl. Phys. Lett. 80:2002;4372.
12. Wickenden A.E., Koleske D.D., Henry R.L., Gorman R.J., Twigg M.E., Fatemi M., Freitas J.A. Jr., Moore W.J. J. Electron. Mater. 29:2000;21.
13. Koleske D.D., Wickenden A.E., Henry R.L., Twigg M.E., Culbertson J.C., Gorman R.J. Appl. Phys. Lett. 73:1998;2018 Koleske D.D., Wickenden A.E., Henry R.L., Twigg M.E., Culbertson J.C., Gorman R.J. Appl. Phys. Lett. 75:1999;1646.
14. Koleske D.D., Wickenden A.E., Henry R.L., Twigg M.E., Culbertson J.C., Gorman R.J. Appl. Phys. Lett. 73:1998;2018 Koleske D.D., Wickenden A.E., Henry R.L., Twigg M.E., Culbertson J.C., Gorman R.J. Appl. Phys. Lett. 75:1999;1646.
15. Koleske D.D., Wickenden A.E., Henry R.L., Culbertson J.C., Twigg M.E. J. Crystal Growth. 223:2001;466.
16. Creighton J.R., Breiland W.G., Coltrin M.E., Pawlowski R.P. Appl. Phys. Lett. 81:2002;2626.
17. SIMS analysis performed by Charles Evans West, Inc.
18. Heying B., Wu X.H., Keller S., Li Y., Kapolnek D., Keller B.P., Denbaars S.P., Speck J.S. Appl. Phys. Lett. 68:1996;643.
19. Wu X.H., Fini P., Tarsa E.J., Heying B., Keller S., Mishra U.K., DenBaars S.P., Speck J.S. J. Crystal Growth. 189/90:1998;231.
20. Klein P.B., Binari S.C., Ikossi K., Wickenden A.E., Koleske D.D., Henry R.L. Electron. Lett. 37:2001;1550.
21. Tang H., Webb J.B., Bardwell J.A., Raymond S., Salzman J., Uzan-Saguy C. Appl. Phys. Lett. 78:2001;757.
22. Van de Walle C.G., Neugebauer J. Mater. Sci. Forum. 19:1997;258.
23. Elsner J., Jones R., Sitch P.K., Porezag V.D., Elstner M., Frauenheim Th., Heggie M.I., Öberg S., Briddon P.R. Phys. Rev. Lett. 79:1997;3672.
24. Elsner J., Jones R., Heggie M.I., Sitch P.K., Haugk M., Frauenheim Th., Öberg S., Briddon P.R. Phys. Rev. B. 58:1998;12571.
25. Northrup J.E. Appl. Phys. Lett. 78:2001;2288.
26. Krtschil A., Dadgar A., Krost A. Appl. Phys. Lett. 82(14):2003;2263.
27. Wiemann N.G., Eastman L.F., Doppalapudi D., Ng H.M., Moustakas T.D. J. Appl. Phys. 83:1998;3656.
28. Look D.C., Sizelove J.R. Phys. Rev. Lett. 82:1999;1237. (and references therein).
29. Ansell B.J., Harrison L., Foxon C.T., Harris J.J., Cheng T.S. Electron. Lett. 36:2000;1237.
30. Xu X.L., Beling C.D., Fung S., Zhao Y.W., Sun N.F., Sun T.N., Zhang Q.L., Zhan H.H., Sun B.Q., Wang J.N., Ge W.K., Wong P.C. Appl. Phys. Lett. 76:2000;152.
31. Hsu J.W.P., Lang D.V., Richter S., Kleiman R.N., Sergent A.M., Molnar R.J. Appl. Phys. Lett. 77:2000;2873.
32. Cheong M.G., Kim K.S., Oh C.S., Namgung N.W., Yang G.M., Hong C.-H., Lim K.Y., Suh E.-K., Nahm K.S., Lee H.J., Lim D.H., Yoshikawa A. Appl. Phys. Lett. 77:2000;2557.
33. S.C. Binari, private communication.