Growth of high mobility GaN by ammonia-molecular beam epitaxy

Applied Physics Letters

Volumn 74, Issue 16, 1999, Pages 2373-2374

  Tang, H ^a   Webb, James B ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CARRIER MOBILITY; CRYSTALLINE MATERIALS; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILANES; SPUTTER DEPOSITION; X RAY CRYSTALLOGRAPHY;

FULL WIDTH AT HALF MAXIMUM (FWHM); GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032622105     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123855     Document Type: Article

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