Effects of different ions implantation on yellow luminescence from GaN

Physica B: Condensed Matter

Volumn 403, Issue 17, 2008, Pages 2666-2670

  You, W ^a   Zhang, X D ^a   Zhang, L M ^a   Yang, Z ^a   Bian, H ^a   Ge, Q ^a   Guo, W X ^a   Wang, W X ^a   Liu, Z M ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

Gallium nitride (GaN); Ion implantation; Photoluminescence; Yellow luminescence

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; ION BOMBARDMENT; ION IMPLANTATION; IONS; LUMINESCENCE; NITRIDES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; ZINC SULFIDE;

AS-GROWN; EPIFILMS; EXPERIMENTAL DATUM; FLUENCE; FLUENCES; GALLIUM NITRIDE (GAN); IMPLANTATION FLUENCE; INTENSITY RATIOS; INTRINSIC DEFECTS; IONS IMPLANTATIONS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; MOCVD; NEAR BAND EDGES; PL MEASUREMENTS; PL SPECTRUM; UV EMISSIONS; WURTZITE; YELLOW LUMINESCENCE;

LIGHT EMISSION;

EID: 60049083375     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.01.033     Document Type: Article

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