Accumulation-layer electron mobility in n-channel 4H-SiC MOSFETs

IEEE Electron Device Letters

Volumn 22, Issue 5, 2001, Pages 212-214

  Chatty, K ^a,b   Chow, T P ^a,b   Gutmann, R J ^a,b   Arnold, E ^a,c   Alok, D ^a,c  

^a IEEE   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

4H SiC; Accumulation layer; Electron mobility; Hall

Indexed keywords

ACCUMULATION-LAYERS; HALL MEASUREMENTS;

CHARGE CARRIERS; ELECTRON MOBILITY; ELECTRON TRAPS; HALL EFFECT; SILICON CARBIDE; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 0035336273     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.919232     Document Type: Article

References (11)

1. 1400 V 4H-SiC power MOSFETs
2. 2.6 kV 4H-SiC lateral DMOSFETs
3. High-voltage lateral RESURF MOSFETs on 4H-SiC
4. Interface states and field-effect mobility in 6H-SiC MOS transistors
5. The planar 6H-SiC ACCUFET: A new high-voltage power MOSFET structure
6. Vital issues for SiC power devices
7. High-voltage accumulation-layer UMOSFETs in 4H-SiC
8. Analysis and optimization of the planar 6H-SiC ACCUFET
9. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
10. Models for electron and hole mobilities in MOS accumulation layers
11. Hall mobility of the electron inversion layer in 6H-SiC MOSFETs