Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC

Applied Physics Letters

Volumn 94, Issue 25, 2009, Pages

  Corra S A ^a   Radtke, C ^a   Soares, G V ^b   Miotti, L ^a,b,d   Baumvol, I J R ^a,b   Dimitrijev, S ^c   Han, J ^c   Hold, L ^c   Kong, F ^c   Stedile, F C ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF CAXIAS DO SUL   (Brazil)

^c GRIFFITH UNIVERSITY   (Australia)

^d NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C INCORPORATION; CARBONACEOUS COMPOUNDS; INTERFACE REGIONS; INTERFACIAL LAYER; MASS DENSITIES; NITROGEN INCORPORATION; SIC SUBSTRATES; X-RAY REFLECTOMETRY;

COMPOSITE FILMS; DIELECTRIC DEVICES; DIELECTRIC FILMS; SILICON CARBIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67649482453     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3159812     Document Type: Article

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