Large area 4H-SiC Power MOSFETs

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 183-186

  Agarwal, A ^a   Ryu, S H ^a   Das, M ^a   Lipkin, L ^a   Palmour, J ^a   Saks, N ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; GATES (TRANSISTOR); HOLE MOBILITY; ION IMPLANTATION; SILICON CARBIDE; SURFACE ROUGHNESS;

POWER TRANSISTORS;

MOSFET DEVICES;

EID: 0034829561     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. High-voltage double-implanted power MOSFETs in 6H-SiC
2. Counter-doped MOSFET's of 4H-SiC
3. Nitridation of silicon dioxide films grown on 6H silicon carbide
4. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
5. Conductivity anisotropy in epitaxial 6H and 4H SiC
6. 2
7. Low interface state density oxides on p-type SiC