Activation of nitrogen implants in 6H-SiC

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 208-211

  Pan, J N ^a   Cooper Jr , J A ^a   Melloch, M R ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Electrical activation; Ion implantation; Silicon carbide

Indexed keywords

EID: 0001870203     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0152-2     Document Type: Article

References (35)

1. P.G. Neudeck, J. Electron. Mater. 24, 283 (1995).
2. D.M. Brown, E.T. Downey, M. Ghezzo, J.W. Kretchmer, R.J. Saia, Y.S. Liu, J.A. Edmond, G. Gati, J.M. Pinbley and W. Schneider, IEEE Trans. Elec. Dev. 40, 325 (1993).
3. W. Xie, J.A. Cooper, Jr. and M.R. Melloch, IEEE Elec. Dev. Lett. 15, 455 (1994).
4. S. Ryu and K.T. Kornegay, Inst. Phys. Conf. Ser. No. 142, (Bristol: IOP, 1995), p. 789.
5. D.M. Brown, M. Ghezzo, J. Kretchmer, V. Krishnamurthy, G. Michon and G. Gati, Proc Trans. 2nd Intl. High-Temperature Electron. Conf., Charlotte, NC, 1994, p. 11.
6. K.K. Diogu, G.L. Harris, A. Mahajan, I. Adesida, D.F. Moeller and R.A. Bertram, 54th Device Research Conf., University of California at Santa Barbara, June 24-26, 1996.
7. D.B. Slater, Jr., G.M. Johnson, L.A. Lipkin, A.V. Suvorov and J.W. Palmour, 54th Device Research Conf., University of California at Santa Barbara, June 24-26, 1996.
8. W. Xie, J.A. Cooper, Jr., M.R. Melloch, J.W. Palmour and C.H. Carter, Jr., IEEE Elec. Dev. Lett. 15, 212 (1994).
9. C.E. Weitzel, J.W. Palmour, C.H. Carter, Jr. and K. Nordquist, IEEE Electron. Dev. Lett. 15, 406 (1994).
10. S. Siram, R.C. Clarke, A.A. Burk, H.M. Hobgood, P.G. McMullin, P.A. Orphanos, R.R. Siergiej, T.J. Smith, C.D. Brandt, M.C. Driver and R.H. Hopkins, IEEE Electron. Dev. Lett. 15, 458 (1994).
11. S.T. Sheppard, M.R. Melloch and J.A. Cooper, Jr., IEEE Electron. Dev. Lett. 17, 4 (1996).
12. R.C. Clarke, A.K. Agarwal, R.R. Siergiej, C.D. Brandt and A.W. Morse, 54th Device Research Conf., University of California at Santa Barbara, June 24-26, 1996.
13. J.W. Palmour, S.T. Allen, R. Singh, L.A. Lipkin and D.G. Waltz, Inst. Phys. Conf. Ser. No. 242, (Bristol: IOP, 1995), p. 813.
14. J.N. Shenoy, J.A. Cooper, Jr. and M.R. Melloch, submitted to IEEE Electron. Dev. Lett.
15. D.J. Larkin, P.G. Neudeck, J.A. Powell and L.G. Matus, Appl. Phys. Lett. 65, 1659 (1994).
16. A.A. Burk, Jr., D.L. Barrett, H.M. Hobgood, R.R. Siergiej, T.T. Braggins, R.C. Clarke, G.W. Eldridge and C.D. Brandt, Inst. Phys. Conf. Ser. No. 137, (Bristol: IOP, 1994), p. 29.
17. D.J. Larkins, S.G. Sridhara, R.P. Devaty and W.J. Choyke, J. Electron. Mater. 24, 289 (1995).
18. R.F. Davis, G. Kelner, M. Shur, J.W. Palmour and J.A. Edmond, Proc. IEEE 79, (New York: IEEE, 1991), p. 677.
19. M.V. Rao, P. Griffiths, O.W. Holland, G. Kelner, J.A. Freitas, Jr., D.S. Simons, P.H. Chi and M. Ghezzo, J. Appl. Phys. 77, 2479 (1995).
20. M.V. Rao, P. Griffiths, J. Gardner, O.W. Holland, M. Ghezzo, J. Kretchmer, G. Kelner and J.A. Freitas, Jr., J. Electron. Mater. 25, 75 (1996).
21. W. Suttrop, H. Zhang, M. Schadt, G. Pensl, K. Dohnke and S. Leibenzeder, Springer Proc. in Physics 71, 143 (1992).
22. T. Kimoto, A. Itoh, H. Matsunami, T. Nakata, and M. Watanabe, J. Electron. Mater. 25, 879 (1996).
23. M. Ghezzo, D.M. Brown, E. Downey and James Kretchmer, Appl. Phys. Lett. 63, 1206 (1993).
24. M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer, W. Hennessy, D.L. Polla and H. Bakhru, IEEE Electron. Dev. Lett. 13, 639 (1992).
25. T. Kimoto, A. Itoh, H. Matsunami, T. Nakata and M. Watanabe, J. Electron. Mater. 24, 235 (1995).
26. N. Inoue, A. Itoh, T. Kimoto, H. Matsunai, T. Nakata and M. Watanabe, Inst. Phys. Conf. Ser. 142, (Bristol: IOP, 1996), p. 525.
27. M.P. Lam, K.T. Kornegay and J.A. Cooper, Jr., Proc. Intl. Semiconductor Device Research Symp., December 1995, p. 517.
28. T. Kimoto, T. Nakajima, H. Matsunami, T. Nakata and M. Inoue, Appl. Phys. Lett. 69, 1113 (1996).
29. M.P. Lam, K.T. Kornegay, J.A. Cooper, Jr. and M.R. Melloch, submitted to IEEE Trans. Electron. Dev.
30. H.G. Bohn, J.M. Williams, C.J. McHargue and G.M. Begun, J. Mater. Res. 2, 107 (1987).
31. W. Xie, J.N. Shennoy, S.T. Sheppard, M.R. Melloch and J.A. Cooper, Jr., Appl. Phys. Lett. 68, 2231 (1996).
32. D.K. Schroder, Semiconductor Material and Device Characterization, (New York, Wiley Inter-Science, 1990).
33. W.J. Schaffer, H.S. Kong, G.H. Negley and J.W. Palmour, Inst. Phys. Conf. Ser. 137, (Bristol: IOP, 1993), p. 155.
34. J.N. Shenoy, G.L. Chindalore, M.R. Melloch, J.A. Cooper, Jr., J.W. Palmour and K.G. Irvine, J. Electron. Mater. 24, 303 (1995).
35. J.N. Pan, J.A. Cooper, Jr. and M.R. Melloch, Electron. Lett. 31, 1200 (1995).