Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of gallium implantation

Ultramicroscopy

Volumn 110, Issue 5, 2010, Pages 383-389

  Cooper, David ^a   Ailliot, Cyril ^a   Barnes, Jean Paul ^a   Hartmann, Jean Michel ^a   Salles, Phillipe ^b   Benassayag, Gerard ^b   Dunin Borkowski, Rafal E ^c  

^a CEA GRENOBLE   (France)

^b CEMES CNRS   (France)

^c TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

Dopant profiling; Focused ion beam milling; Off axis electron holography

Indexed keywords

AMORPHOUS SURFACE LAYERS; DETECTION LIMITS; DOPANT PROFILING; FIB MILLING; FOCUSED ION BEAM MILLING; LOW TEMPERATURES; OFF-AXIS ELECTRON HOLOGRAPHY; OPERATING VOLTAGE; SITE-SPECIFICITY; TRANSMISSION ELECTRON MICROSCOPE;

BEAM PLASMA INTERACTIONS; ELECTRON HOLOGRAPHY; ELECTRONS; FOCUSED ION BEAMS; ION BOMBARDMENT; MILLING (MACHINING); SPECIMEN PREPARATION; SURFACE DEFECTS; TRANSMISSION ELECTRON MICROSCOPY;

IONS;

GALLIUM; GALLIUM ARSENIDE;

ARTICLE; ARTIFACT REDUCTION; CONTROLLED STUDY; ELECTRIC POTENTIAL; ELECTRON MICROSCOPE; HOLOGRAPHY; LOW TEMPERATURE; OFF AXIS ELECTRON HOLOGRAPHY; SEMICONDUCTOR; SENSITIVITY AND SPECIFICITY; SURFACE CHARGE; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 77952321208     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2010.02.001     Document Type: Article

References (35)

1. International Technology Roadmap for Semiconductors, 2008 update. (Semiconductor Industry Association, San Jose, CA, 2008); http://public.itrs.net.
2. Rau W.D., Schwander P., Baumann F.H., Hoppner W., Ourmazd A. Phys. Rev. Lett. 1999, 82:2614-2617.
3. Gribelyuk M.A., McCartney M.R., Li J., Murthy S., Ronsheim P., Doris B., McMurray J.S., Hegde S., Smith D.J. Phys. Rev. Lett. 2002, 89:025052.
4. Gribelyuk M.A., Domenicucci A., Ronsheim P.A., McMurray J.S., Gluschenov O. J. Vac. Sci. Technol. B 2008, 26:408.
5. Tilke A.T., Lenk A., Muhle U., Wagner C., Dahl C., Lichte H. IEEE Trans. Electron Dev. 2005, 52:1067-1071.
6. Lichte H., Formanek P., Lenk A., Linck M., Matzeck C., Lehmann M., Simon P. Annu. Rev. Mater. Res. 2008, 37:539-588.
7. Lichte H. Ultramicroscopy 2008, 108:256-262.
8. McCartney M.R., Smith D.J. Annu. Rev. Mater. Res. 2008, 37:729-767.
9. Overwijk M.H.F., van den Heuval F.C., Bulle-Lieumwa C.W.T. J. Vac. Sci. Technol. B 1993, 11:2021-2024.
10. Kato N.I., Kohno Y., Saka H. J. Vac. Sci. Technol. A 1999, 17:1201-1204.
11. Barna A., Pecz B., Menyhard M. Ultramicroscopy 1998, 70:161-171.
12. Twitchett A.C., Dunin-Borkowski R.E., Hallifax R.J., Broom R.F., Midgley P.A. J. Microsc. 2003, 214:287.
13. Cooper D., Rivallin P., Hartmann J.-M., Chabli A., Dunin-Borkowski R.E. J. Appl. Phys. 2009, 106:064506.
14. Cooper D., Twitchett A.C., Somodi P.K., Farrer I., Ritchie D.A., Midgley P.A., Dunin-Borkowski R.E. Appl. Phys. Lett. 2006, 88:063510.
15. Mooney PM., Cheng L.J., Suli M., Gerson J.D., Corbett J.W. Phys. Rev. B 1977, 15:3836.
16. Cooper D., Ailliot C., Truche R., Hartmann J., Barnes J., Bertin F. J. Appl. Phys. 2008, 104:064513.
17. Cooper D., Truche R., Rivallin P., Hartmann J., Laugier F., Bertin F., Chabli A. Appl. Phys. Lett. 2007, 91:143501.
18. Williams D.B., Carter C.B. Transmission Electron Microscopy 1996, Plenum Press, New York.
19. Twitchett A.C., Dunin-Borkowski R.E., Hallifax R.J., Broom R.F., Midgley P.A. Phys. Rev. Lett. 2002, 88:2383021.
20. McCartney M.R., Gajdardziska-Josifovska M. Ultramicroscopy 1994, 53:283-289.
21. Twitchett A.C., Yates T., Newcomb S.B., Dunin-Borkowski R.E., Midgley P.A. Nanoletters 2007, 7:2020.
22. Sze S.M. Semiconductor Devices, Physics and Technology 2002, Wiley, New York, pp. 180-184.
23. Cooper D., Aventurier B., Templier F., Chabli A. Appl. Phys. Lett. 2008, 93:183509.
24. McCartney M.R., Gribelyuk M.A., Li J., Ronsheim P., Murray J.S., Smith D.J. Appl. Phys. Lett. 2002, 80:3213-3215.
25. Bellegia M., Fazzini P.F., Merli P.G., Pozzi G. Phys. Rev. B 2003, 67:045328.
26. Fazzini P.F., Merli P.G., Pozzi G., Ubaldi F. Phys. Rev. B 2005, 72:085312.
27. Cooper D., Twitchett A.C., Midgley P.A., Dunin-Borkowski R.E. J. Appl. Phys. 2007, 101:094508.
28. Cooper D., Truche R., Twitchett A.C., Midgley P.A., Dunin-Borkowski R.E. J. Microsc. 2009, 223:102-113.
29. Sasaki H., Yamamato K., Hiriyama T., Ootomo S., Matsuda T., Nakasaki R., Ishii H. Appl. Phys. Lett. 2009, 89:244101.
30. Chung S., Johnson S., Zhang Y., Smith D.J., McCartney M.R. J. Appl. Phys. 2009, 105:014910.
31. Cooper D., Truche R., Rouviere J.-L. Ultramicroscopy 2008, 108:488-493.
32. Thompson K., Lawrence D., Larsson D.J., Olson J.D., Kelly T.F., Gorman B. Ultramicroscopy 2007, 107:131-139.
33. Cooper D., Bertin F., Salles P., Benassayag G. Appl. Phys. Lett. 2008, 93:043510.
34. J.F. Zeigler, The Stopping and Range of Ions in Matter, 2003. http://www.srim.org.
35. Han M.G., Fejes P., Xie Q., Bagchi S., Taylor B., Connor J., McCartney M.R. IEEE Trans. Electron Dev. 2007, 54:3336-3341.