SCOPUS 정보 검색 플랫폼

Volumn 108, Issue 5, 2008, Pages 488-493

Reduction of electrical damage in specimens prepared using focused ion beam milling for dopant profiling using off-axis electron holography

b MINATEC (France)

Author keywords

Focused ion beam milling; GaAs; Off axis electron holography

Indexed keywords

ELECTRON HOLOGRAPHY; ION BEAMS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRICAL DAMAGE; ION BEAM MILLING;

SEMICONDUCTOR JUNCTIONS;

ARTICLE; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRON BEAM; ELECTRON DIFFRACTION; HOLOGRAPHY; SIGNAL NOISE RATIO;

EID: 40749157835 PISSN: 03043991 EISSN: None Source Type: Journal
DOI: 10.1016/j.ultramic.2007.08.006 Document Type: Article

Times cited : (12)

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