Quantitative analysis of one-dimensional dopant profile by electron holography

Applied Physics Letters

Volumn 80, Issue 17, 2002, Pages 3213-3215

  McCartney, M R ^a   Gribelyuk, M A ^b   Li, Jing ^a   Ronsheim, P ^b   McMurray, J S ^b   Smith, David J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON COATING; DOPANT PROFILE; OFF-AXIS ELECTRON HOLOGRAPHY; P-N JUNCTION; QUANTITATIVE COMPARISON; SECONDARY-ION MASS SPECTROSCOPY; SPATIAL RESOLUTION; SURFACE LAYERS; TRANSMISSION ELECTRON MICROSCOPE; VOLTAGE PROFILE;

MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON HOLOGRAPHY;

EID: 79956048451     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1473702     Document Type: Article

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