Mapping of dopant concentration in a GaAs semiconductor by off-axis phase-shifting electron holography

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Sasaki, H ^a   Yamamoto, K ^a   Hirayama, T ^a   Ootomo, S ^b   Matsuda, T ^b   Iwase, F ^b   Nakasaki, R ^b   Ishii, H ^b  

^a JAPAN FINE CERAMICS CENTER   (Japan)

^b Furukawa Electronic Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLOGRAPHY; ION BEAMS; PHASE SHIFT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; THIN FILMS;

COMPOUND SEMICONDUCTORS; DOPANT CONCENTRATION; MICROSAMPLING TECHNIQUES; PHASE-SHIFTING ELECTRON HOLOGRAPHY;

SEMICONDUCTOR MATERIALS;

EID: 33845768871     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2402907     Document Type: Article

References (19)

1. S. Frabboni, G. Matteucci, and G. Pozzi, Phys. Rev. Lett. 55, 2196 (1985).
2. M. R. McCartney, D. J. Smith, R. Hull, J. C. Bean, E. Voelkl, and B. Frost, Appl. Phys. Lett. 65, 2603 (1994).
3. Z. Wang, T. Kato, N. Shibata, T. Hirayama, N. Kato, K. Sasaki, and H. Saka, Appl. Phys. Lett. 81, 478 (2002).
4. A. C. Twitchett, R. E. Dunin-Borkowski, and P. A. Midgley, Phys. Rev. Lett. 88, 238302 (2002).
5. W. D. Rau, P. Schwander, F. H. Baumann, W. Hoppner, and A. Ourmazd, Phys. Rev. Lett. 82, 2614 (1999).
6. Z. Wang, T. Hirayama, K. Sasaki, H. Saka, and N. Kato, Appl. Phys. Lett. 80, 246 (2002).
7. D. Cooper, A. C. Twitchett, P. K. Somodi, P. A. Midgley, R. E. Dunin-Borkowski, I. Farrer, and D. A. Ritchie, Appl. Phys. Lett. 88, 063510 (2006).
8. N. I. Kato, N. Miura, and N. Tsutsui, J. Vac. Sci. Technol. A 16, 1127 (1998).
9. Z. Wang, T. Kato, T. Hirayama, N. Kato, K. Sasaki, and H. Saka, Appl. Surf. Sci. 241, 80 (2005).
10. A. Yabuuchi, S. Tametou, T. Okano, S. Inazato, S. Sadayama, Y. Yamamoto, K. Iwasaki, and Y. Sugiyama, J. Electron Microsc. 53, 471 (2004).
11. K. Tanabe, T. Matsuda, H. Sasaki, and F. Iwase, in Proceedings of the 14th Conference of Microscopy of Semiconducting Materials, Oxford, 2005, edited by, A. G. Cullis, and, J. L. Hutchison, Springer, Berlin, p. 417.
12. H. Sasaki, T. Matsuda, T. Kato, T. Muroga, Y. Iijima, T. Saitoh, F. Iwase, Y. Yamada, T. Izumi, Y. Shiohara, and T. Hirayama, J. Electron Microsc. 53, 497 (2004).
13. T. Ohnishi, H. Koike, T. Ishitani, S. Tomimatsu, K. Umemura, and T. Kamino, Proceedings of the 25th International Symposium for Test and Failure Analysis (ASM, Materials Park, Ohio, 1999), p. 449.
14. Q. Ru, J. Endo, T. Tanji, and A. Tonomura, Appl. Phys. Lett. 59, 2372 (1991).
15. K. Yamamoto, I. Kawajiri, T. Tanji, M. Hibino, and T. Hirayama, J. Electron Microsc. 49, 31 (2000).
16. M. Vanzi, Optik (Stuttgart) 68, 319 (1984).
17. R. E. Dunin-Borkowski, A. C. Twitchett, P. A. Midgley, M. R. McCartney, T. Kasama, D. Cooper, and P. K. Somodi, in Proceedings of the 14th Conference of Microscopy of Semiconducting Materials, Oxford, 2005, edited by, A. G. Cullis, and, J. L. Hutchison, (Springer, Berlin, 2006), p. 203.
18. W. E. Spicer, P. W. Chye, P. R. Skeath, C. Y. Su, and I. Lindau, J. Vac. Sci. Technol. 16, 1422 (1979).
19. W. Monch, Surf. Sci. 132, 92 (1983).