Improvement in electron holographic phase images of focused-ion-beam-milled GaAs and Si p-n junctions by in situ annealing

Applied Physics Letters

Volumn 88, Issue 6, 2006, Pages

  Cooper, David ^a   Twitchett, Alison C ^a   Somodi, Philippa K ^a   Midgley, Paul A ^a   Dunin Borkowski, Rafal E ^a   Farrer, Ian ^b   Ritchie, David A ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLOGRAPHIC PHASE IMAGES; OFF-AXIS ELECTRON HOLOGRAPHY;

ANNEALING; NOISE ABATEMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

HOLOGRAPHY;

EID: 32444434282     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2172068     Document Type: Article

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