High-resolution three-dimensional mapping of semiconductor dopant potentials

Nano Letters

Volumn 7, Issue 7, 2007, Pages 2020-2023

  Twitchett Harrison, Alison C ^a   Yates, Timothy J V ^a   Newcomb, Simon B ^a,b   Dunin Borkowski, Rafal E ^a   Midgley, Paul A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Glebe Laboratories   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON HOLOGRAPHY; NANOSTRUCTURED MATERIALS; TOMOGRAPHY;

DOPANT DISTRIBUTIONS; ELECTRON TOMOGRAPHY; ELECTROSTATIC POTENTIAL; THREE-DIMENSIONAL MAPPING;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 34547557998     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl070858n     Document Type: Article

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