Amorphisation and surface morphology development at low-energy ion milling

Ultramicroscopy

Volumn 70, Issue 3, 1998, Pages 161-171

  Barna, A ^a   Pecz B ^a   Menyhard, M ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

Ion milling; Ion bombardment induced amorphisation; Ion bombardment induced roughening; Specimen preparation

Indexed keywords

ARTICLE; DEVICE; IMAGING SYSTEM; IONIZATION; MASS SPECTROMETRY; OPTICAL RESOLUTION; TECHNIQUE; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHIZATION; COMPUTER SIMULATION; INTERFACES (MATERIALS); ION BOMBARDMENT; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ION MILLING;

SEMICONDUCTING SILICON;

EID: 0031597257     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(97)00120-4     Document Type: Article

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