Electrical measurement techniques in atomic force microscopy

Critical Reviews in Solid State and Materials Sciences

Volumn 35, Issue 1, 2010, Pages 38-51

  Avila, Alba ^a   Bhushan, Bharat ^b  

^a UNIVERSIDAD DE LOS ANDES   (Colombia)

^b OHIO STATE UNIVERSITY   (United States)

Author keywords

Conductive atomic force microscopy; Piezoresistance force microscopy; Scanning capacitance microscopy; Scanning impedance microscopy; Scanning Kelvin force microscopy

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPY; FORCE MICROSCOPY; KELVIN FORCE MICROSCOPY; PIEZORESISTANCE; SCANNING CAPACITANCE MICROSCOPY; SCANNING IMPEDANCE MICROSCOPIES;

ATOMIC FORCE MICROSCOPY; CAPACITANCE; ELECTRIC NETWORK ANALYSIS; SCANNING; SURFACE PROPERTIES;

ATOMS;

EID: 77950921092     PISSN: 10408436     EISSN: 15476561     Source Type: Journal    
DOI: 10.1080/10408430903362230     Document Type: Article

References (58)

1. G. Binnig, C. F. Quate, and Ch. Gerber, Atomic force microscopy, Phys. Rev. Lett. 56, 930-933 (1986).
2. G. Binnig, Ch. Gerber, E. Stoll, T. R. Albrecht, and C. F. Quate, Atomic resolution with atomic force microscope, Europhys. Lett. 3, 1281-1286 (1987).
3. B. Bhushan, Springer Handbook of Nanotechnology, 2nd ed., Springer-Verlag, Heidelberg, Germany (2007).
4. B. Bhushan, Nanotribology and Nanomechanics: An Introduction, 2nd ed., Springer-Verlag, Heidelberg, Germany (2008).
5. M. Nonnemacher, M. P. O'Boyle, and H. K. Wickramasinghe, Kelvin probe force microscopy, Appl. Phys. Lett. 58, 2921-2923 (1991).
6. J. M. R. Weaver and D. W. Abraham, High resolution atomic force microscopy potentiometry, J. Vac. Sci. B 9, 1559-1561 (1991).
7. D. W. Abraham, C. Williams, J. Slinkman, and H. K. Wickra-masinghe, Lateral dopant profiling in semiconductors by forcing microscopy using capacitive detection, J. Vac. Sci. Tech. B 9, 703-706 (1991).
8. P. Guethner and K. Dransfeld, Local poling of ferroelectric polymers by scanning force microscopy, Appl. Phys. Lett. 61, 1137-1139 (1992).
9. 2 gate oxides using atomic force microscopy, Appl. Phys. Lett. 62, 786-788 (1993).
10. P. DeWolf, J. Snauwaert, T. Clarysse, W. Vandervorst, and L. Helle-mans, Characterization of a point-contact on silicon using force microscopy-supported resistance measurements, Appl. Phys. Lett. 66, 1530-1532 (1995).
11. M. A. Erikson, R. G. Beck, M. Topinka, J. A. Katine, R. M. West-ervelt, K. L. Campman, and A. C. Gossard, Cryogenic scanning probe characterization of semiconductor nanostructures, Appl. Phys. Lett. 69, 671-673 (1996).
12. S. V. Kalinin and A. Gruverman, Scanning Probe Microscopy. Electrical and Electromechanical Phenomena at the Nanoscale, 1st ed., Springer-Verlag, Heidelberg (2007).
13. D. Bonnell, Scanning Probe Microscopy and Spectroscopy Theory, Techniques, and Applications, 2nd ed., Wiley-VCH, New York (2001).
14. W. Han, Introduction to scanning microwave microscopy (SMM), Application Note Agilent Technologies, Inc. (2008).
15. D. Fujita, H. Itoh, S. Ichimura, and T. Kurosawa, Global standardization of scanning probe microscopy, Nanotechnology 18, 1-7 (2007).
16. B. Bhushan and A. V. Goldade, Measurements and analysis of surface potential change during wear of single-crystal silicon (100) at ultralow loads using Kelvin probe microscopy, Appl. Surf. Sci. 157, 373-381 (2000).
17. L. Kelvin, Contact electricity of metals, Phil. Mag. 46, 82-120 (1898).
18. V. Elings and J. Gurley, Jumping Probe Microscope, U.S. Patent No. 5,266,801 (1993).
19. D. DeVecchio and B. Bhushan, Use of a nanoscale Kelvin probe for detecting wear precursors, Rev. Sci. Instrum. 69, 3618-3624 (1998).
20. M. Palacio and B. Bhushan, Surface potential and resistance measurements for detecting wear of chemically-bonded and unbonded molecularly-thick perfluoropolyether lubricant films using atomic force microscopy, J. Colloid Interface Sci. 315, 261-269 (2007).
21. Y. Rosenwaks, O. Tal, S. Saraf, A. Schwarzman, E. Lep-kifker, and A. Boag, Kelvin probe recent advances and applications, in Applied Scanning Probe Methods VIII, Bhushan, B., Fuchs, H., and Tomitori, M., Eds., Springer, Berlin, 351-375 (2008).
22. J. Alexander, S. Magonova, and M. Moeller, Topography and surface potential in Kelvin force microscopy of perfluoroalkyl alkanes self-assemblies, J. Vac. Sci. Tech. B 27, 903-911 (2009).
23. M. P. O'Boyle, T. T. Hwang, and H. K. Wickramasinghe, Atomic force microscopy for work functions on the nanometer scale, Appl. Phys. Lett. 74, 2641-2642 (1999).
24. S. V. Kalinin and D. A. Bonnell, Scanning impedance microscopy: From impedance spectra to impedance images, Mater. Res. Soc. Symp. Proc. 699, R1.2.2-R1.2.6 (2002).
25. S. V. Kalinin, Nanoscale Electrical Phenomena at Oxide Surfaces and Interfaces by Scanning Probe Microscopy, PhD thesis, University of Pennsylvania, Philadelphia, PA (2002).
26. S. V. Kalinin and D. A. Bonnell, Scanning impedance microscopy of electro active interfaces, Appl. Phys. Lett.78, 1306-1308 (2001).
27. R. Shao, S. V. Kalinin, and D. A. Bonnell, Local impedance imaging and spectroscopy of polycrystalline ZnO using contact atomic force microscopy Appl. Phys. Lett. 82, 1869-1871 (2003).
28. M. Freitag, A. T. Johnson, S. V. Kalinin, and D. A. Bonnel, Role of single defects in electronic transport through carbon nanotube field-effect transistors, Phys. Rev. Lett. 89, 2168011 (2002).
29. S. Lányi, Applications of scanning capacitance microscopy to analysis at the nanoscale, in Applied Scanning Probe Methods VIII, Bhushan, B, Fuchs, H., and Tomitori, M., Eds., Springer, Berlin, 377-420 (2008).
30. C. C. Williams, Two-dimensional dopant profiling by scanning capacitance microscopy, Ann. Rev. Mater. Sci. 29, 471-504 (1999).
31. D. T. Lee, J. P. Pelz, and B. Bhushan, Instrumentation for direct, low frequency scanning capacitance microscopy, and analysis of position dependent stray capacitance, Rev. Sci. Instrum. 73, 3525-3533 (2002).
32. D. T. Lee, J. P. Pelz, and B. Bhushan, Scanning capacitance microscopy for thin film measurements, Nanotechnology 17, 1484-1491 (2006).
33. C. Y. Nakakura, P. Tangyunyong, D. L. Hetherington, and M. R. Shaneyfelt, Method for the study of semiconductor device operation using scanning capacitance microscopy, Rev. Sci. Instrum. 74, 127-133 (2003).
34. G. Neubauer, A. Erickson, C. C. Williams, J. J. Kopanski, M. Rodgers, and D. Adderton, Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structures, J. Vac. Sci. Tech. B 14, 426-432 (1996).
35. M. Alexe and A. Gruverman, Nanoscale Characterization of Ferroelectric Materials, 1st ed., Springer, Berlin (2004).
36. A. Roelofs, A. Schneller, K. Szot, and R. Waser, Piezoresponse force microscopy of lead titanate nanograins possibly reaching the limit of ferroelectricity, Appl. Phys. Lett. 81, 5231-5233 (2002).
37. 2, Appl. Phys. Lett. 73, 3114-3116 (1998).
38. T. Das, Veeco Instruments Inc., Application Module (2009).
39. B. Bhushan, M. Palacio, and B. Kinzig, AFM-based nanotribolog-ical and electrical characterization of ultrathin wear-resistant ionic liquid films, J. Colloid Interface Sci. 317, 275-287 (2008).
40. S. C. Nagpure, B. Bhushan, S. Babu, and G. Rizzoni, Scanning spreading resistance characterization of aged Li-ion batteries using atomic force microscopy, Scripta Mater. 60, 933-936 (2009).
41. P. DeWolf, M. Geva, C.L. Reynolds,T.Hantschel,W. Vandervorst, and R. B. Bylsma, Two-dimensional carrier profiling of InP-based structures using scanning spreading resistance microscopy, J. Vac. Sci. Tech. A 17, 1285-1288 (1999).
42. K. Slater, Scanning Spreading Resistance Microscopy (SSRM), Veeco Instruments Inc., Santa Barbara, CA (2000).
43. C. Staii, R. Shao, D. A. Bonnell, A. T. Johnson, Impedance spec-troscopy, high frequency scanning gate microscopy and local memory effect of carbon nanotube transistors, Meeting of the American Physical Society Los Angeles, CA, 21-25 (2005).
44. A. Bachtold, M. S. Fuhrer, M. Forero, E. H. Anderson, A. Zettl, and P. L. McEuen, Scanned probe microscopy of electronic transport in carbon nanotubes, Phys. Rev. Lett. 84, 6082-6085 (2000).
45. J. W. O. Hsu, H. M. Ng, A. M. Sergent, and S. N. G. Shu, Scanning Kelvin force microscopy imaging of surface potential variations near threading dislocations in GaN, Appl. Phys. Lett. 81, 3579-3581 (2002).
46. H. O. Jacobs, P. Leuchtmann. O. J. Homan, and A. Stemmer, Resolution and contrast in Kelvin probe force microscopy, J. Appl. Phys. 84, 1168-1173 (1998).
47. M. Rohwerder, P. Leblanc, G. S. Frankel, and M. Stratmann, Application of scanning Kelvin probe in corrosion science, in Marcus, P. and Mansfeld, F., Eds., Analytical Methods in Corrosion Science and Engineering, CRC Press, Boca Raton, FL, 605-648 (2006).
48. D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed., John Wiley & Sons, Hoboken, NJ (2006).
49. J. Ren, H. D. Liess, R. Mackel, and H. Baumgartnet, Scanning Kelvin microscope: A new method for surface investigations, Fre-sen. J. Anal. Chem. 353, 303-306 (1995).
50. A. Galembeck, C. A. R. Costa, M. C. V. M. da Silva, E. F. Souza, and F. Galembeck, Scanning electric potential microscopy imaging of polymers: Electrical charge distribution in dielectrics, Polymer 42, 4845-4851 (2001).
51. S. Cho, S. Sabuktagin, M. A. Reshchikov, D. K. Johnstone, and H. Morkoc, Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy, Appl. Phys. Lett. 84, 3070-3072 (2004).
52. H. Tanbakuchi, H. Wenhai, and M. Ricther, Scanning impedance probe microscope, nanotechnology, NANO '08 8th IEEE Conference, Arlington, TX, 218-219 (2008).
53. R. Wiesendanger, Scanning Probe Microscopy and Spectroscopy, Cambridge University Press, Cambridge, UK (1994).
54. R. C. Barrett and C. F. Quate, Charge storage in nitride-oxide-silicon medium by scanning capacitance microscopy, J. Appl. Phys. 70, 2725-2733 (1991).
55. B. D. Huey, C. Ramanujan, M. Bobji, J. Blendell, G. White, R. Szoszkiewicz, and A. Kulik, The importance of distributed loading and cantilever angle in piezo-force microscopy, J. Electroceram. 13, 287-291 (2004).
56. G. Wielgoszewski, T. Gotszalk, M. Woszczyna, P. Zawierucha, and E. Zschech, Conductive atomic force microscope for investigation of thin-film gate insulators, Bull. Pol. Acad. Tech. 56, 39-44 (2008).
57. K. B. Holt and A. J. Bard, Y. Show G. M. Swain, Scanning electrochemical microscopy and conductive probe atomic force microscopy studies of hydrogen-terminated boron-doped diamond electrodes with different doping levels, J. Phys. Chem. B 108, 15117-15127 (2004).
58. J. Nxumalo, D. T. Shimizu, and D. J. Thomson, Cross-sectional imaging of semiconductor device structures by scanning resistance microscopy, J. Vac. Sci. Tech. B 14, 386-389 (1996).