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Volumn 73, Issue 21, 1998, Pages 3114-3116
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Conducting atomic force microscopy for nanoscale electrical characterization of thin SiO2
a a a
a
SIEMENS AG
(Germany)
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC PROPERTIES;
ELECTRIC VARIABLES MEASUREMENT;
MOS CAPACITORS;
NANOSTRUCTURED MATERIALS;
SILICA;
FOWLER-NORDHEIM TUNNELING CURRENT;
OXIDE THINNING;
THIN FILMS;
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EID: 0032561607
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.122690 Document Type: Article |
Times cited : (170)
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References (18)
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