Quantum-confined stark effect in Ge/SiGe quantum wells on Si for optical modulators

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 12, Issue 6, 2006, Pages 1503-1512

  Kuo, Yu Hsuan ^a,d   Lee, Yong Kyu ^b,d   Ge, Yangsi ^a   Ren, Shen ^a   Roth, Jonathan E ^a   Kamins, Theodore I ^b,c,d   Miller, David A B ^a,d   Harris Jr , James S ^a,d  

^a STANFORD UNIVERSITY   (United States)

^b SAMSUNG Electronics   (South Korea)

^c HEWLETT PACKARD LABORATORIES   (United States)

^d IEEE   (United States)

Author keywords

Electroabsorption effect; Germanium; Optical interconnections; Optical modulators; Quantum confined Stark effect (QCSE); Silicon

Indexed keywords

ENERGY GAP; HOLE MOBILITY; LIGHT MODULATORS; MICROPROCESSOR CHIPS; OPTICAL INTERCONNECTS; QUANTUM THEORY; SEMICONDUCTING GERMANIUM; SILICON;

ELECTROABSORPTION; QUANTUM CONFINED STARK EFFECT (QCSE); SILICON ELECTRONIC CHIPS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33845640876     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2006.883146     Document Type: Review

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