Direct-gap exciton and optical absorption in the Ge/SiGe quantum well system

Applied Physics Letters

Volumn 94, Issue 12, 2009, Pages

  Kuo, Yu Hsuan ^a   Li, Yin Shun ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; BINDING ENERGY; ELECTRIC FIELDS; ELECTROABSORPTION MODULATORS; EXCITONS; GERMANIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES;

ABSORPTION RATIOS; CONTRAST RATIOS; ELECTROABSORPTION; EXCITONIC ABSORPTIONS; GE QUANTUM WELLS; GROUND LEVELS; IMPLEMENTATION SCHEMES; LONG WAVELENGTHS; OPTICAL ABSORPTIONS; OPTICAL OSCILLATOR STRENGTHS; QUANTUM WELL SYSTEMS; QUANTUM WELLS; QUANTUM-CONFINED STARK EFFECTS; QUANTUM-WELL STRUCTURES; TRANSITION ENERGIES; TUNNELING RESONANCES; VARIATIONAL METHODS; VERTICAL ELECTRIC FIELDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 63549088617     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3106621     Document Type: Article

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