Pure-edge dislocation network for strain-relaxed SiGeSi (001) systems

Applied Physics Letters

Volumn 86, Issue 22, 2005, Pages 1-3

  Sakai, Akira ^a   Taoka, Noriyuki ^a   Nakatsuka, Osamu ^a   Zaima, Shigeaki ^a   Yasuda, Yukio ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); FILM GROWTH; FUNCTIONS; MORPHOLOGY; MOSFET DEVICES; STRAIN; TENSILE STRENGTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

HETEROINTERFACES; PURE-EDGE DISLOCATION NETWORK; STRAIN-RELAXED SYSTEMS; TEMPERATURE ANNEALING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 20844433833     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1943493     Document Type: Article

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