Atomistic modeling of misfit dislocations for Ge/(001)Si and Ge/(111)Si

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 267-274

  Dornheim, M ^a   Teichler, H ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DEFORMATION; DISLOCATIONS (CRYSTALS); ELASTICITY; NUMERICAL ANALYSIS; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STACKING FAULTS; STIFFNESS; SUBSTRATES;

ATOMISTIC MODELING;

HETEROJUNCTIONS;

EID: 0032711402     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199901)171:1<267::AID-PSSA267>3.0.CO;2-I     Document Type: Article

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