Application of high-resolution X-ray diffraction to study strain status in Si1-xGex/Si1-yGey/Si (001) heterostructures

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 453-456

  Chtcherbatchev, K D ^a   Sequeira, A D ^b   Franco, N ^b   Barradas, N P ^b   Myronov, M ^c   Mironov, O A ^c   Parker, E H C ^c  

^a NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

Heterostructures; Relaxation phenomena; Si Ge; X ray diffraction

Indexed keywords

ANNEALING; ANODES; HEAT TREATING FURNACES; RELAXATION PROCESSES; STRAIN; SUBSTRATES; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

STRAIN RELAXATION;

HETEROJUNCTIONS;

EID: 0037197409     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)01001-7     Document Type: Conference Paper

References (6)