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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 6, 2008, Pages 1935-1937

Observation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room temperature

(5) Myronov, M a Sawano, K a Shiraki, Y a Mouri, T b Itoh, K M b

a TOKYO CITY UNIVERSITY (Japan)

b KEIO UNIVERSITY (Japan)

Author keywords

2DHG; Carrier density; Ge quantum well; MBE; Mobility

Indexed keywords

CARRIER CONCENTRATION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN CONTROL; TWO DIMENSIONAL;

2DHG; GE QUANTUM WELLS; TWO DIMENSIONAL HOLE GAS;

HOLE MOBILITY;

EID: 41349113779 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2007.08.142 Document Type: Article

Times cited : (9)

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