Silicate formation and thermal stability of ternary rare earth oxides as high- k dielectrics

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 724-730

  Van Elshocht, S ^a   Adelmann, C ^a   Conard, T ^a   Delabie, A ^a   Franquet, A ^a   Nyns, L ^a   Richard, O ^a   Lehnen, P ^b   Swerts, J ^c   De Gendt, S ^a,d  

^a IMEC   (Belgium)

^b AIXTRON AG   (Germany)

^c ASM BELGIUM   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; CURRENT DENSITY; ELLIPSOMETRY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; HAFNIUM; LEAD; LEAKAGE CURRENTS; LOGIC CIRCUITS; MASS SPECTROMETRY; METALS; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; MOS DEVICES; OZONE WATER TREATMENT; PHOTOELECTRON SPECTROSCOPY; RARE EARTH ELEMENTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SILICATES; STRUCTURE (COMPOSITION); SYSTEM STABILITY; THERMODYNAMIC STABILITY; TRANSISTORS; X RAY DIFFRACTION ANALYSIS;

ALTERNATIVE MATERIALS; COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS); DEPOSITED LAYERS; GATE-LEAKAGE CURRENTS; HIGH K DIELECTRICS; HIGH THERMAL STABILITY; NONLINEAR DEPENDENCE; POW ERFUL TOOL; RARE EARTH CONTENT; RARE-EARTH OXIDES; SILICATE FORMATION; THERMAL STABILITY; TIME OF FLIGHT SECONDARY ION MASS SPECTROSCOPY (TOF-SIMS); X RAY DIFFRACTION (XRD); X RAY PHOTOELECTRON SPECTROSCOPY (XPS);

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 46449084587     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2891257     Document Type: Article

References (40)

1. See, e.g., Alex. Tullo, Chem. Eng. News 85, 9 (2007).
2. L. Pantisano, T. Schram, B. O'Sullivan, T. Conard, S. De Gendt, G. Groeseneken, P. Zimmerman, A. Akheyar, M. M. Heyns, S. Shamuilla, V. V. Afanas'ev, and A. Stesmans, Appl. Phys. Lett. 89, 113505 (2006).
3. L.-A. Ragnarsson, V. S. Chang, H. Y. Yu, H.-J. Cho, T. Conard, K. M. Yin, A. Delabie, J. Swerts, T. Schram, S. De Gendt, and S. Biesemans, IEEE Electron Device Lett. 28, 486 (2007).
4. P. Sivasubramani, J. Kim, M. J. Kim, B. E. Gnade, and R. M. Wallace, J. Appl. Phys. 101, 114108 (2007).
5. D. J. Lichtenwalner, J. S. Jur, A. I. Kingon, M. P. Augustin, Y. Yang, S. Stemmer, L. V. Goncharova, T. Gustafsson, and E. Garfunkel, J. Appl. Phys. 98, 024314 (2005).
6. M. Copel, E. Cartier, and F. M. Ross, Appl. Phys. Lett. 78, 1607 (2001).
7. M. Copel, E. Cartier, V. Narayanan, M. C. Reuter, S. Guha, and N. Bojarczuk, Appl. Phys. Lett. 81, 4227 (2002).
8. C.-J. Choi, M.-G. Jang, Y.-Y. Kim, M.-S. Jun, T.-Y. Kim, and M.-H. Song, Appl. Phys. Lett. 91, 012903 (2007).
9. G. Lupina, T. Schroeder, J. Dabrowski, Ch. Wenger, A. U. Mane, H.-J. Mussig, P. Hoffmann, and D. Schmeisser, J. Appl. Phys. 99, 114109 (2006).
10. A. Fissel, Z. Elassar, O. Kirfel, E. Bugiel, M. Czernohorsky, and H. J. Osten, J. Appl. Phys. 99, 074105 (2006).
11. A. Sakai, S. Sakashita, M. Sakashita, Y. Yasuda, S. Zaima, and S. Miyazaki, Appl. Phys. Lett. 85, 5322 (2004).
12. M. Copel, Appl. Phys. Lett. 82, 1580 (2003).
13. T.-M. Pan, F.-J. Tsai, C.-I. Hsieh, and T.-W. Wu, Electrochem. Solid-State Lett. 10, G21 (2007).
14. D. Eom, S. Y. No, C. S. Hwang, and H. J. Kim, J. Electrochem. Soc. 154, G49 (2007).
15. H. Ono and T. Katsumaata, Appl. Phys. Lett. 78, 1832 (2001).
16. J. A. Gupta, D. Landheer, J. P. McCaffrey, and G. I. Sproule, Appl. Phys. Lett. 78, 1718 (2001).
17. G. Lupina, T. Schroeder, Ch. Wenger, J. Dabrowski, and H.-J. Mussig, Appl. Phys. Lett. 89, 222909 (2006).
18. S. Stemmer, Y. Li, B. Foran, P. S. Lysaght, S. K. Streiffer, P. Fuoss, and S. Seiffert, Appl. Phys. Lett. 83, 3141 (2003).
19. B. W. Busch, J. Kwo, M. Hong, J. P. Mannaerts, B. J. Sapjeta, W. H. Schulte, E. Garfunkel, and T. Gustafsson, Appl. Phys. Lett. 79, 2447 (2001).
20. D. Niu, R. W. Ashcraft, and G. N. Parsons, Appl. Phys. Lett. 80, 3575 (2002).
21. A. Goryachko, J. P. Liu, D. Krüger, H. J. Osten, E. Bugiel, R. Kurps, and V. Melnik, J. Vac. Sci. Technol. A 20, 1860 (2002).
22. M. Meuris, P. W. Mertens, A. Opdebeeck, H. F. Schmidt, M. Depas, G. Vereecke, M. M. Heyns, and A. Philipossian, Solid State Technol. 38, 109 (1995).
23. M. Schumacher and J. Linder, European Semicond. 23 (November 2002).
24. S. Van Elshocht, P. Lehnen, B. Seitzinger, A. Abrutis, C. Adelmann, B. Brijs, M. Caymax, T. Conard, S. De Gendt, A. Franquet, C. Lohe, M. Lukosius, A. Moussa, O. Richard, P. Williams, T. Witters, and P. Zimmerman, J. Electrochem. Soc. 153, F219 (2006).
25. C. Adelmann, P. Lehnen, S. Van Elshocht, C. Zhao, B. Brijs, A. Franquet, T. Conard, M. Roeckerath, J. Schubert, O. Boissìre, C. Lohe, and S. De Gendt, Chem. Vap. Deposition 13, 568 (2007).
26. R. Thomas, P. Ehrhart, M. Luysberg, M. Boese, R. Waser, M. Roeckerath, E. Rije, J. Schubert, S. Van Elshocht, and M. Caymax, Appl. Phys. Lett. 89, 232902 (2006).
27. Pulsar is a trademark of ASM International nv, The Netherlands.
28. S. Van Elshoch, M. Caymax, S. De Gendt, T. Conard, J. Ṕtry, L. Dat́, D. Pique, and M. M. Heyns, J. Electrochem. Soc. 151, F77 (2004).
29. J.-P. Maria, D. Wicaksana, A. I. Kingon, B. Busch, H. Schulte, E. Garfunkel, and T. Gustafsson, J. Appl. Phys. 90, 3476 (2002).
30. S. Guha, E. Cartier, M. A. Gribelyuk, N. A. Bojarczuk, and M. C. Copel, Appl. Phys. Lett. 77, 2710 (2000).
31. B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965).
32. X. Wu, D. Landheer, G. I. Sproule, T. Quance, M. J. Graham, and G. A. Botton, J. Vac. Sci. Technol. A 20, 1141 (2002).
33. S. Jeon and H. Hwang, J. Appl. Phys. 93, 6393 (2003).
34. Y. Yamamoto, K. Kita, K. Kyuno, and A. Toriumi, Appl. Phys. Lett. 89, 032903 (2006).
35. S. A. Park, Y. S. Roh, Y. K. Kim, J. H. Baeck, M. Noh, K. Jeong, C. H. Chang, M. K. Joo, T. G. Kim, J. H. Song, and S.-H. Ko, J. Appl. Phys. 98, 024906 (2005).
36. L. Miotti, C. Driemeier, F. Tatsch, C. Radtke, V. Edon, M. C. Hugon, O. Voldoire, B. Agius, and I. J. R. Baumvol, Electrochem. Solid-State Lett. 9, F49 (2006).
37. J. Jun, J. H. Jun, and D. J. Choi, Electrochem. Solid-State Lett. 6, F37 (2003).
38. R. Fujitsuka, M. Sakashita, A. Sakai, M. Ogawa, S. Zaima, and Y. Yasuda, Jpn. J. Appl. Phys., Part 1 46, 2428 (2005).
39. R. Thomas, P. Ehrhart, M. Roeckerath, S. Van Elshocht, E. Rije, M. Luysberg, M. Boese, J. Schubert, M. Caymax, and R. Waser, J. Electrochem. Soc. 154, G147 (2007).
40. F.-C. Chiu, J. Appl. Phys. 102, 044116 (2007).