Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N2-promoted passivation

Nanotechnology

Volumn 21, Issue 13, 2010, Pages

  Volatier, Maté ^a   Duchesne, David ^b   Morandotti, Roberto ^b   Arès, Richard ^a   Aimez, Vincent ^a  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b INRS EMT   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AL-CONCENTRATION; GAAS; GAAS/ALGAAS; HARD MASKS; HIGH ASPECT RATIO; ICP ETCHING; NANOWAVEGUIDES; PASSIVATION LAYER; SCANNING ELECTRON MICROSCOPES; SINGLE-MODE LIGHT; SINGLE-STEP PROCESS; TOP-DOWN PROCESS;

CHLORINE; ELECTRON BEAMS; INDUCTIVELY COUPLED PLASMA; NANOPHOTONICS; PASSIVATION; PHOTORESISTS; PLASMA ETCHING; PRESSURE DROP; SCANNING ELECTRON MICROSCOPY;

ASPECT RATIO;

EID: 77949395229     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/13/134014     Document Type: Article

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