Germanium etching in high density plasmas for 0.18 μm complementary metal-oxide-semiconductor gate patterning applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 1833-1840

  Monget, C ^a   Schiltz, A ^a   Joubert, O ^a,b   Vallier, L ^a,b   Guillermet, M ^c   Tormen, B ^d  

^a ORANGE LABS   (France)

^b INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

^c CEA LETI   (France)

^d SOS Thomson Microelectronics   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11644293390     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590094     Document Type: Article

References (20)

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