Inductively coupled plasma etching of III-V semiconductors in Cl2-based chemistries

Materials Science in Semiconductor Processing

Volumn 1, Issue 1, 1998, Pages 65-73

  Lee, J W ^a   Lambers, E S ^a   Abernathy, C R ^a   Pearton, S J ^a   Shul, R J ^b   Ren, F ^c   Hobson, W S ^c   Constantine, C ^d  

^a UNIVERSITY OF FLORIDA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c LUCENT TECHNOLOGIES   (United States)

^d Qualtx Technology Inc   (United States)

Author keywords

Compound semiconductors; Etching

Indexed keywords

COMPOSITION; MORPHOLOGY; PLASMAS; PRESSURE; SEMICONDUCTOR MATERIALS; SURFACES;

ETCH RATES; INDUCTIVELY COUPLED PLASMA ETCHING;

PLASMA ETCHING;

EID: 0032035859     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(98)00002-X     Document Type: Article

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