Inductively coupled plasma etching of III-V semiconductors in BCl3-based chemistries. I. GaAs, GaN, GaP, GaSb and AlGaAs

Applied Surface Science

Volumn 143, Issue 1, 1999, Pages 174-182

  Maeda, T ^a   Lee, J W ^b   Shul, R J ^c   Han, J ^c   Hong, J ^a   Lambers, E S ^a   Pearton, S J ^a   Abernathy, C R ^a   Hobson, W S ^d  

^a University of Florida   (United States)

^b Plasma Therm IP   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ARGON; BORON COMPOUNDS; ELECTRON CYCLOTRON RESONANCE; ELECTRON ENERGY LEVELS; HYDROGEN; IONS; NITROGEN; PLASMA ETCHING; PRESSURE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

ANISOTROPIC PATTERN TRANSFER; CHUCK POWER; ETCH RATES; INDUCTIVELY COUPLED PLASMA ETCHING; ION FLUX;

SEMICONDUCTOR MATERIALS;

EID: 0032632985     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00594-7     Document Type: Article

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