BCl 3 /Ne etching of III-V semiconductors in a planar inductively coupled plasma reactor

Applied Surface Science

Volumn 222, Issue 1-4, 2004, Pages 74-81

  Lim, W T ^a   Baek, I K ^a   Lee, J W ^a   Lee, E S ^a   Jeon, M H ^a   Cho, G S ^a   Pearton, S J ^b  

^a Inje University   (South Korea)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

High density plasma; Inductively coupled plasma reactor; Semiconductor

Indexed keywords

ANISOTROPY; BORON COMPOUNDS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MASKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; PHOTORESISTS; PLASMA ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY; SURFACE CHEMISTRY; SURFACE CLEANING;

HIGH DENSITY PLASMAS (HDP); PLASMA CHEMISTRY; REDEPOSITION METHODS;

INDUCTIVELY COUPLED PLASMA;

EID: 0346122818     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.009     Document Type: Article

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