Smooth sidewall in InP-based photonic crystal membrane etched by N 2 -based inductively coupled plasma

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1326-1333

  Lee, K H ^a   Guilet, S ^a   Patriarche, G ^a   Sagnes, I ^a   Talneau, A ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AERODYNAMICS; ANISOTROPIC ETCHING; CARRIER LIFETIME; CHEMICAL ELEMENTS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL STRUCTURE; ETCHING; FLOW OF GASES; GAS DYNAMICS; INDUCTIVELY COUPLED PLASMA; NITROGEN; NONMETALS; OPTICAL DESIGN; OPTICAL WAVEGUIDES; PASSIVATION; PHOTONIC CRYSTALS; PHOTORESISTS; PHYSICAL VAPOR DEPOSITION; PLASMAS; POSITIVE IONS; POWDERS; PRASEODYMIUM COMPOUNDS; RISK ASSESSMENT; SEMICONDUCTOR QUANTUM WELLS; TURBULENT FLOW;

ACTIVE DEVICES; AR PLASMAS; CHEMICAL IDENTIFICATION; COUPLED PLASMAS; GAS FLOW-RATES; GAS FLOWING; INDUCTIVELY COUPLED PLASMAS; ION FLUXES; LOW PROBABILITY; LOW PROPAGATION LOSSES; MASS FLOWS; MEMBRANE DEVICES; MISSING ROW; PHOTONIC CRYSTAL (PHC); PLASMA CHARACTERIZATION; POSITIVE-ION DENSITY; QUANTUM WELLS; SIDE WALL ROUGHNESS; SURFACE PASSIVATION; TIME-RESOLVED PHOTOLUMINESCENCE; TRANSMISSION ELECTRON; VARIATIONS OF;

PLASMA DIAGNOSTICS;

EID: 49749114392     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2945299     Document Type: Article

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