Comparative study of Cl2, Cl2/O2, and Cl2/N2 inductively coupled plasma processes for etching of high-aspect-ratio photonic-crystal holes in InP

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 5, 2008, Pages 1675-1683

  Carlstrom C F ^a,c   Van Der Heijden, R ^a,d   Andriesse, M S P ^b   Karouta, F ^a   Van Der Heijden, R W ^a   Van Der Drift, E ^b   Salemink, H W M ^a,b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c QuNano AB   (Sweden)

^d ASML   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CRYSTALLOGRAPHY; ETCHING; INDUCTIVELY COUPLED PLASMA; PHOTONICS; PHOTORESISTS; PLASMA ETCHING;

COMPARATIVE STUDIES; HIGH ASPECT RATIOS; INDUCTIVELY COUPLED PLASMA ETCHING;

PHOTONIC CRYSTALS;

EID: 53349127482     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2968696     Document Type: Article

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