High-rate etching of GaAs using chlorine atmospheres doped with a lewis acid

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1542-1546

  Franz, Gerhard ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVELY COUPLED PLASMAS; ETCH RATES; ETCHING BEHAVIOR; GAAS; HIGH-RATE ETCHING; LEWIS ACID;

CHLORINE; CYCLOTRONS; EMISSION SPECTROSCOPY; ETCHING; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDUCTIVELY COUPLED PLASMA; OPTICAL EMISSION SPECTROSCOPY; PHOTORESISTS; SEMICONDUCTING GALLIUM;

ELECTRIC DISCHARGES;

EID: 0010323551     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581184     Document Type: Article

References (16)

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16. V. M. Donnelly, D. E. Ibbotson, and D. L. Flamm, in Ion Bombardement Modification of Surfaces, edited by O. Auciello and R. Kelly (Elsevier, Amsterdam, 1984), Chap. 8, p. 355.