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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 4, 2009, Pages 1909-1914

Inductively coupled plasma etching of GaAs suspended photonic crystal cavities

(8) Braive, R a Le Gratiet, L a Guilet, S a Patriarche, G a Lematre A a Beveratos, A a Robert Philip, I a Sagnes, I a

a UNIV PARIS SUD (France)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING PROCESS; GAAS; HIGH PRESSURE; INDUCTIVELY-COUPLED; PHOTONIC CRYSTAL CAVITIES; PROCESS PARAMETERS; RF BIAS; SIDEWALL ROUGHNESS; SYSTEMATIC ANALYSIS;

CHLORINE; CRYSTAL ATOMIC STRUCTURE; GALLIUM ALLOYS; INDUCTIVELY COUPLED PLASMA; OPTICAL RESONATORS; PHOTONIC CRYSTALS; PHOTORESISTS; PLASMA ETCHING; SEMICONDUCTING GALLIUM;

DRY ETCHING;

EID: 68349161043 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3154519 Document Type: Article

Times cited : (14)

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