Properties of nitrogen diluted hydrogenated amorphous carbon (n-type a-C:H) films and their realization in n-type a-C:H/p-type crystalline silicon heterojunction diodes

Vacuum

Volumn 84, Issue 7, 2010, Pages 882-889

  Kumar, Sushil ^a   Dwivedi, Neeraj ^a   Rauthan, C M S ^a   Panwar, O S ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

a C:H:N; Carbon nitride; Electrical properties; Hetrojunction diode; PECVD

Indexed keywords

A-C:H FILMS; CAPACITANCE-VOLTAGE CHARACTERISTICS; CRYSTALLINE SILICONS; CURRENT VOLTAGE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; GASEOUS MIXTURE; HETEROJUNCTION DIODES; HYDROGENATED AMORPHOUS CARBON; LASER RAMAN; N-TYPE SEMICONDUCTORS; RF-PECVD; SELF-BIAS;

AMORPHOUS CARBON; AMORPHOUS FILMS; AMORPHOUS SILICON; CARBON FILMS; CARBON NITRIDE; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; HETEROJUNCTIONS; HYDROGENATION; NITROGEN; REFRACTIVE INDEX; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

SEMICONDUCTOR DIODES;

EID: 76849115552     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.12.003     Document Type: Article

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