Determination of density of states in amorphous carbon

IEEE Transactions on Electron Devices

Volumn 53, Issue 8, 2006, Pages 1775-1781

  Paul, S ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

Amorphous hydrogenated carbon; Capacitance voltage; Density of states; Metal insulator semiconductor structures

Indexed keywords

CAPACITANCE; CARBON; ELECTRIC POTENTIAL; HYDROGENATION;

AMORPHOUS HYDROGENATED CARBON; CAPACITANCE-VOLTAGE; DENSITY OF STATES; METAL-INSULATOR-SEMICONDUCTOR STRUCTURES;

AMORPHOUS MATERIALS;

EID: 33746595775     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.877868     Document Type: Article

References (42)

1. M. J. Powell, C. van Berkel, A. R. Franklin, S. C. Deane, and W. I. Milne, "Defect pool in amorphous-silicon thin-film transistors," Phys. Rev. B, Condens. Matter, vol. 45, no. 8, pp. 4160-4170, Feb. 1992.
2. G. H. Döhler, "Conductivity, thermopower, and statistical shift in amorphous semiconductors," Phys. Rev. B, Condens. Matter, vol. 19, no. 4, pp. 2083-2091, Feb. 1979.
3. S. K. O'Leary, S. R. Johnson, and P. K. Lim, "The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis," J. Appl. Phys., vol. 82, no. 7, pp. 3334-3340, Oct. 1997.
4. P. Chatterjee, R. Vanderhaghen, and B. Equer, "The origin of current gain under illumination in amorphous silicon n-i-p-i-n structures," J. Appl. Phys., vol. 87, no. 4, pp. 1874-1881, Feb. 2000.
5. M. J. Powell and J. W. Orton, "Characteristics of amorphous silicon staggered-electrode thin-film transistors," Appl. Phys. Letts., vol. 45, no. 2, pp. 171-173, Jul. 1984.
6. H. S. Soh, C. Lee, J. Jang, M. Y. Jung, and S. Sung, "Determination of the density of states at the Fermi level of hydrogenated amorphous silicon in thin-film transistor structure by space charge limited current measurement," Appl. Phys. Lett., vol. 63, no. 6, pp. 779-781, Aug. 1993.
7. S. C. Deane and M. J. Powell, "Field-effect conductance in amorphous silicon thin-film transistors with a defect pool density of states," J. Appl. Phys., vol. 74, no. 11, pp. 6655-6666, Dec. 1993.
8. J. P. Kleider, C. Longeaud, M. Gauthier, and P. Rocai Cabarrocas, "Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements," Appl. Phys. Lett., vol. 75, no. 21, pp. 3351-3353, Nov. 1999.
9. F. Zhong and J. D. Cohen, "Measured and calculated distributions of deep defect states in hydrogenated amorphous silicon: Verification of deep defect relaxation dynamics," Phys. Rev. Lett., vol. 71, no. 4, pp. 597-600, Jul. 1993.
10. S. Nespurek and J. Sworakowski, "Use of space-charge-limited current measurements to determine the properties of energetic distributions of bulk traps," J. Appl. Phys., vol. 51, no. 4, pp. 2098-2102, Apr. 1980.
11. K. D. McKenzie, P. G. Lecomber, and W. E. Spear, "The density of states in Amorphous-Silicon determined by space-charge-limited current measurements," Philos. Mag. B-Phys., Condens. Matter Stat. Mech. Electron. Opt. and Magn. Prop., vol. 46, no. 4, pp. 377-389, 1982.
12. C. E. Michelson and J. D. Cohen, "Effects of the implantation of oxygen, nitrogen, and carbon on the density of states of n-type hydrogenated amorphous silicon," Phys. Rev. B, Condens. Matter, vol. 41, no. 3, pp. 1529-1541, Jan. 1990.
13. C.-Y. Huang, S. Guha, and S. Hudgens, "Study of gap states in hydrogenated amorphous silicon by transient and steady-state photoconductivity measurements," Phys. Rev. B, Condens. Matter, vol. 27, no. 12, pp. 7460-7465, Jun. 1983.
14. J. Robertson, "Electronic structure of diamond-like carbon," Diamond Relat. Mater., vol. 6, no. 2-4, p. 212, 1997.
15. J. H. Van Vleck, "The dipolar broadening of magnetic resonance lines in crystals," Phys. Rev. B, Condens. Matter, vol. 74, no. 9, p. 1168, 1948.
16. G. Fusco, A. Tagliaffero, W. I. Milne, and M. Fanciulli, "Temperature dependence analysis of the electron paramagnetic resonance signal and electrical conductivity in a-C and a-C," Diamond Relat. Mater., vol. 3, no. 4-6, p. 844, 1994.
17. C. P. Pole, Electron Spin Resonance. London, U.K.: Wiley, 1983.
18. Balberg and D. E. Carlson, "Tunneling in hydrogenated amorphous silicon," Phys. Rev. Lett., vol. 43, no. 1, pp. 58-61, Jul. 1979.
19. S. R. P. Silva and G. A. J. Amaratunga, "Use of space-charge-limited current to evaluate the electronic density of states in diamond-like carbon thin films," Thin Solid Films, vol. 253, no. 1/2, p. 146, 1994.
20. A. Zeinert, H.-J. von Bardeleben, and R. Bouzerar, "An optical absorption and electron spin resonance study in hydrogenated amorphous carbon prepared by radio frequency sputtering," Diamond and Relat. Mater., vol. 9, no. 3-6, p. 728, 2000.
21. Rusli, J. Robertson, and G. A. J. Amaratunga, "Photoluminescence behavior of hydrogenated amorphous carbon," J. Appl. Phys., vol. 80, no. 5, pp. 2998-3003, Sep. 1996.
22. J. Ristein, J. Schafer, and L. Ley, "Effective correlation energies for defects in A-C-H from a comparison of photoelectron yield and electron-spin-resonance experiments," Diamond Relat. Mater., vol. 4, no. 4, p. 508, 1995.
23. S. M. Sze, Physics of Semiconductor Devices. Hoboken, NJ: Wiley, 1981.
24. D. V. Lang, J. D. Cohen, and J. P. Harbison, Phys. Rev. B, vol. 25, p. 5285, 1982.
25. B. Racine, M. Benlahsen, K. Zellama, R. Bouzerar, J. P. Kleider, and H. J. Von Bardeleben, "Electronic properties of hydrogenated amorphous carbon films deposited using ECR-RF plasma method," Diamond Relat. Mater., vol. 10, no. 2, p. 200, 2001.
26. S. Paul and F. J. Clough, "Schottky barrier formation on rf-plasma enhanced chemical vapour deposited hydrogenated amorphous carbon," Diamond Relat. Mater., vol. 7, no. 11/12, p. 1734, 1998.
27. K. C. Palinginis, Y. Lubianiker, J. D. Cohen, A. Ilie, B. Kleinsorge, and W. I. Milne, "Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques," Appl. Phys. Lett., vol. 74, no. 3, pp. 371-373, Jan. 1999.
28. S. Egret, J. Robertson, W. I. Milne, and F. J. Clough, "Diamond-like carbon metal-semiconductor-metal switches for active matrix displays," Diamond Relat. Mater., vol. 6, no. 5-7, p. 879, 1997.
29. E. Ohta, Y. Kimura, H. Kondo, M. Takahashi, K. Kameyama, K. Yamda, and I. Fujimura, "MIM switching devices using diamond-like carbon films," in Proc. SSDM, vol. 589, 1990.
30. F. J. Clough, W. I. Milne, B. Kleinsorge, J. Robertson, G. A. J. Amaratunga, and B. N. Roy, "Tetrahedrally bonded amorphous carbon (ta-C) thin film transistors," Electron. Lett., vol. 32, no. 5, p. 498, 1996.
31. S. L. Maeng, S. Uchikoga, F. J. Clough, A. Tagliaferro, A. J. Flewitt, J. Robertson, and W. I. Milne, "A carbon based bottom gate thin film transistor," Diamond Relat. Mater., vol. 9, no. 3-6, p. 805, 2000.
32. F. Giorgis, F. Giuliani, C. F. Pirri, A. Tagliaferro, and E. Tresso, "Photoluminescence and electronic density of states in a-C:H films," Appl. Phys. Lett., vol. 72, no. 20, pp. 2520-2522, May 1998.
33. A. J. Snell, K. D. Mackenzie, P. G. LeComber, and W. E. Spear, "Interpretation of capacitance and conductance measurements on metal-amorphous silicon barriers," Phil. Mag., vol. 40, no. 1, p. 1, 1979.
34. L. Klibanov, M. Allon-Alaluf, N. Croitoru, and A. Seidman, "Study of photoconductivity of thin amorphous diamond-like carbon (a:DLC) films prepared by r.f. glow discharge technique," Diamond Relat. Mater., vol. 5, no. 12, p. 1414, 1996.
35. P. Komninou, G. Nouet, P. Patsalas, T. Kehagias, M. Gioti, S. Logothetidis, and T. Karakostas, "Crystalline structures of carbon complexes in amorphous carbon films," Diamond Relat. Mater., vol. 9, no. 3-6, p. 703, 2000.
36. 4/Ar RF plasma," Appl. Phys. Lett., vol. 55, no. 7, pp. 634-635, Aug. 1989.
37. S. R. P. Silva and G. A. J. Amaratunga, "Evidence of hexagonal diamond in plasma-deposited carbon films," J. Mater. Sci., vol. 29, no. 19, pp. 4962-4966, Oct. 1994.
38. I. Rusman, I. Klibanov, L. Burstein, Y. Rosenber, V. Weinstein, E. BenJacob, N. Croitoru, and A. Seidman, "Microstructure and phase characterization of diamond-like amorphous hydrogenated carbon films using STM/STS," Thin Solid Films, vol. 287, no. 1/2, p. 36, 1996.
39. S. Paul and F. J. Clough, "Schottky contacts on amorphous carbon: A more reliable approach," Appl. Phys. Lett., vol. 78, no. 10, pp. 1415-1417, Mar. 2001.
40. K. C. Palinginis, J. D. Cohen, A. Ilie, N. M. J. Conway, and W. I. Milne "Defect band distributions in hydrogenated tetrahedral amorphous carbon/crystalline silicon heterostructures," J. Non-Cryst. Solids, vol. 266, pt. 2, p. 1077, 2000.
41. A. G. Milnes and D. L. Feucht, Heterojunction and Metal-Semiconductor Junctions. New York: Academic, 1972.
42. R. Robetson, "Diamond-like amorphous carbon," Mater. Sci. Eng., R Rep., vol. 37, no. 4-6, p. 129, 2002.