Electrical behaviour of metal/a-C/Si and metal/CN/Si devices

Carbon

Volumn 37, Issue 5, 1999, Pages 871-876

  Evangelou, E ^a   Konofaos, N ^a   Logothetidis, S ^b   Gioti, M ^b  

^a UNIVERSITY OF IOANNINA   (Greece)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CAPACITANCE; CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC PROPERTIES; FILM GROWTH; INDUCED CURRENTS; METALLIZING; MIS DEVICES; NITRIDES; SEMICONDUCTING SILICON; SPUTTER DEPOSITION;

AMORPHOUS CARBON; CARBON NITRIDE;

CARBON;

EID: 0032637182     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0008-6223(98)00288-7     Document Type: Article

References (17)

1. Kalish R. Appl Surf Sci. 117 118:1997;558.
2. Chhowalla M., Robertson J., Chen C.W., Silva S.R.P., Davis C.A., Amaratunga G.A.J., Milne W.I. J Appl Phys. 81:1997;139.
3. Konofaos N., Thomas C.B. J Appl Phys. 81:1997;6238.
4. Clough F.J., Milne W.I., Kleinsorge B., Robertson J., Amaratunga G.A.J., Roy B.N. Electron Lett. 32:1996;498.
5. Logothetidis S. Appl Phys Lett. 69:1996;158.
6. Gioti M., Logothetidis S. Diam Rel Mat. 7:1998;444.
7. Logothetidis S., Lefakis H., Gioti M. Carbon. 36:1998;757.
8. Aspnes D.E. Thin Soid Films. 89:1982;249.
9. Logothetidis S., Petalas J., Ves S. J Appl Phys. 79:1996;1040.
10. Logothetidis S., Evangelou E., Konofaos N. J Appl Phys. 82:1997;5017.
11. Konofaos N, Evangelou E, Logothetidis S, Gioti M. Proc. of the XIV Greek Solid State Physics Conference. Ioannina, Greece, 1998.
12. nd Edition. New York: Wiley, 1981.
13. Conway N.M.J., Milne W.I., Robertson J. Diam Rel Mater. 7:1998;477.
14. Kleinsorge B., Ilie A., Chhowalla M., Fukarek W., Milne W.I., Robertson J. Diam Rel Mater. 7:1998;472.
15. Takada N., Arai K., Nitta S., Nonomura S. Appl Surf Sci. 113 114:1997;274.
16. Boettger E., Bluhm A., Jiang X., Schaefer L., Klages C.P. J Appl Phys. 77:1995;6332.
17. Stumm P., Drabold D.A., Fedders P.A. J Appl Phys. 81:1997;1289.