Effects of methane gas flow rate on the optoelectrical properties of nitrogenated carbon thin films grown by surface wave microwave plasma chemical vapor deposition

Diamond and Related Materials

Volumn 15, Issue 2-3, 2006, Pages 371-377

  Rusop, M ^a   Adhikari, S ^b   Omer, A M M ^b   Soga, T ^a   Jimbo, T ^a   Umeno, M ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b CHUBU UNIVERSITY   (Japan)

Author keywords

a C:N; Amorphous carbon nitride; Gas flow rate; Methane; Microwave; Surface wave

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARBON; SURFACE WAVES; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS CARBON NITRIDE; GAS FLOW RATE; SURFACE WAVE MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION (SWMP-CVD);

THIN FILMS;

EID: 33644885743     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.07.034     Document Type: Article

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