Bonding structure and optical properties of a-CNx:H films deposited in CH4-NH3 system

Vacuum

Volumn 83, Issue 11, 2009, Pages 1397-1401

  Wu, Wei Dong ^a,b   Ni, Jing ^a,b   Wang, Xue Min ^a   Yang, Xiang Dong ^a,c   Chen, Zhi Mei ^b   Tang, Yong Jian ^a  

^a Research Center of Laser Fusion   (China)

^b SICHUAN UNIVERSITY   (China)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

a CNx:H films; Eg; Hollow cathode; Isonitrile

Indexed keywords

A-CNX:H FILMS; BONDING CONFIGURATIONS; BONDING STRUCTURE; C ATOMS; CHEMICAL COMPOSITIONS; CONDUCTION MECHANISM; DOUBLE BONDS; EG; FT-IR SPECTRUM; FTIR; HIGH TEMPERATURE; HOLLOW CATHODE; HYDROGENATED AMORPHOUS CARBON NITRIDE; ISONITRILE; NITROGEN ATOM; NITROGEN CONCENTRATIONS; SINGLE BOND; TRIPLE BONDS; XPS;

AMORPHOUS CARBON; ATOMS; CHEMICAL BONDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; NITRIDES; OPTICAL PROPERTIES; PLASMA DEPOSITION;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 67649359330     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.04.055     Document Type: Article

References (30)

1. Liu A.Y., and Cohen M.L. Science 245 (1989) 841
2. Liu A.Y., and Cohen M.L. Phys Rev B 41 (1990) 10727
3. Kusano Y., Evetts J.E., Somekh R.E., and Hutchings I.M. Thin Solid Films 332 (1998) 56
4. Li J.J., Zheng W.T., Bian H.T., Lü X.Y., Jiang Z.G., Bai Y.Z., et al. Acta Phys Sin 52 (2003) 1797 [in Chinese]
5. Hoffman A., Gouzman I., and Brener R. Appl Phys Lett 64 (1994) 845
6. Leonhardt A., Grüger H., Selbmann D., Arnold B., and Thomas J. Thin Solid Films 332 (1998) 69
7. Ni J., Wu W., Ju X., Yang X., Chen Z., and Tang Y. Thin Solid Films 516 (2008) 7422
8. Niu C., Lu Y.Z., and Lieber C.M. Science 261 (1993) 334
9. Zhao X.A., Wong C.W., Tsang Y.C., Wong Y.W., Chan P.W., and Choy C.L. Appl Phys Lett 66 (1995) 2652
10. Boyd K.J., Marton D., Todorov S.S., Al-Bayati A.H., Kulik J., Zuhr R.A., et al. J Vac Sci Technol A 3 (1995) 2110
11. Han H.X., and Feldman B.J. Solid State Commun 65 (1988) 921
12. Gouzman I., Brener R., and Hoffman A. J Vac Sci Technol A 17 (1999) 411
13. Lejeune M., Durand-Drouhin O., Charvet S., Grosman A., Ortega C., and Benlahsen M. Thin Solid Films 444 (2003) 1
14. Corkill J.L., and Cohen M.L. Phys Rev B 48 (1993) 17622
15. Marton D., Boyd K.J., Al-Bayati A.H., Todorov S.S., and Rabalais J.W. Phys Rev Lett 73 (1994) 118
16. Sjöström H., Hultman L., Sundgren J.-E., Hainsworth S.W., Page T.F., and Theunissen G.S.A.M. J Vac Sci Technol A 14 (1996) 56
17. Zhang L.H., Gong H., Li Y.Q., and Wang J.P. Carbon 42 (2004) 537
18. Wei J., Hing P., and Mo Z.Q. Surf Interface Anal 28 (1999) 208
19. Kaufman J.H., Metin S., and Saperstein D.D. Phys Rev B 39 (1989) 13053
20. Mutsukura N., and Akita K. Thin Solid Films 349 (1999) 115
21. Durand-Drouhin O., Lejeune M., Clin M., Ballutaud D., and Benlahsen M. Solid State Commun 118 (2001) 179
22. Amin O., and Kalish R. J Appl Phys 70 (1991) 4958
23. Schwan J., Dworschak W., Jung K., and Ehrbardt H. Diamond Relat Mater 3 (1994) 1034
24. Silva S.R.P., Clay K.J., Speakman S.P., and Amaratunga G.A.J. Diamond Relat Mater 4 (1995) 977
25. Silva S.R.P., and Amaratunga G.A.J. Thin Solid Films 270 (1995) 194
26. Silva S.R.P., Amaratunga G.A.J., and Constantinou C.P. J Appl Phys 72 (1992) 1149
27. Lu Y.F., Ren Z.M., Song W.D., and Chan D.S.H. J Appl Phys 84 (1998) 2133
28. Wang X., and Martin P.J. Appl Phys Lett 68 (1996) 1177
29. Davis E.A., and Mott N.F. Philos Mag 22 (1970) 903
30. Mott N.F. Philos Mag 22 (1970) 7