The influence of nitrogen on the dielectric constant and surface hardness in diamond-like carbon (DLC) films

Diamond and Related Materials

Volumn 13, Issue 2, 2004, Pages 316-319

  Guerino, M ^a   Massi, M ^a   Maciel, H S ^a   Otani, C ^a   Mansano, R D ^b   Verdonck, P ^b   Libardi, J ^c  

^a INSTITUTO TECNOLÓGICO DE AERONÁUTICA   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c FEQ   (Brazil)

Author keywords

Doping; Electrical (electronic) properties; Hardness; Nitrogenated diamond like carbon films; Raman spectroscopy

Indexed keywords

CAPACITANCE; CHEMICAL BONDS; ELECTRIC POTENTIAL; NITROGEN; PERMITTIVITY; RAMAN SCATTERING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTERING; SURFACE STRUCTURE;

CAPACITANCE-VOLTAGE CURVES; SURFACE HARDNESS;

DIAMOND LIKE CARBON FILMS;

DIAMOND;

EID: 1542378063     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2003.10.016     Document Type: Article

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