Defects, doping, and conduction mechanisms in nitrogen-doped tetrahedral amorphous carbon

Journal of Applied Physics

Volumn 81, Issue 3, 1997, Pages 1289-1295

  Stumm, P ^a   Drabold, D A ^a   Fedders, P A ^b  

^a OHIO UNIVERSITY   (United States)

^b WASHINGTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; APPROXIMATION THEORY; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC PROPERTIES; FERMI LEVEL; IONIC CONDUCTION; NITROGEN; NUMERICAL METHODS; RELAXATION PROCESSES; SEMICONDUCTOR DOPING;

AMORPHOUS CARBON; CONDUCTION BAND TAIL STATES; DANGLING BONDS; EFFECTIVE MASS THEORY; FIRST PRINCIPLES METHODS; LOCAL DENSITY APPROXIMATION;

CARBON;

EID: 0031075723     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363907     Document Type: Article

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