Sputter deposition of nanocrystalline βsic films and molecular dynamics simulations of the sputter process

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 2, 2010, Pages 1120-1128

  Ziebert, Carlos ^a   Ye, Jian ^a   Ulrich, Sven ^a   Prskalo, Alen Pilip ^b   Schmauder, Siegfried ^b  

^a KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Magnetron sputtering; Molecular dynamics simulation; Nanoindentation; Silicon carbide; Sputter yield

Indexed keywords

AR ATOM; CLASSICAL MOLECULAR DYNAMICS; GAS FLOWS; LOW-ENERGY RANGE; MD SIMULATION; MOLECULAR DYNAMICS SIMULATION; MOLECULAR DYNAMICS SIMULATIONS; NANOCRYSTALLINE FILMS; NANOCRYSTALLINES; RF-MAGNETRON SPUTTERING; RF-POWER; SI SUBSTRATES; SIC FILMS; SPUTTER PROCESS; SPUTTER YIELD; SPUTTER YIELDS; SUBSTRATE TEMPERATURE; TARGET-SUBSTRATE DISTANCE; TOTAL GAS PRESSURE; WAFER BENDING;

ARGON; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ATOMS; DYNAMICS; MAGNETRON SPUTTERING; MECHANICAL PROPERTIES; MOLECULAR DYNAMICS; MOLECULAR MECHANICS; NANOCRYSTALLINE SILICON; NANOINDENTATION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SILICON WAFERS; TARGETS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SUBSTRATES;

EID: 76349095896     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.1842     Document Type: Conference Paper

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