Molecular dynamics simulation of energetic ion bombardment onto a-Si3N4 surfaces

Journal of Crystal Growth

Volumn 230, Issue 1-2, 2001, Pages 285-290

  Kim, Dong Ho ^a   Kim, Do Hyun ^a   Lee, Kyu Sang ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

A1. Computer simulation; A1. Etching; A1. Surface processes; B1. Nitrides; B2. Dielectric materials

Indexed keywords

AMORPHOUS MATERIALS; ARGON; COMPUTER SIMULATION; DIELECTRIC MATERIALS; ETCHING; FUNCTIONS; ION BOMBARDMENT; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; PLASMA APPLICATIONS; POTENTIAL ENERGY; RELAXATION PROCESSES; SPUTTERING;

PLASMA SPUTTERING;

SILICON NITRIDE;

EID: 0035426385     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01336-7     Document Type: Conference Paper

References (16)