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Volumn 294, Issue 1-2, 1997, Pages 133-136

Infrared spectroscopy of strained Si1-yCy alloys (0≤y≤0.015) grown on silicon

Author keywords

Alloys; Carbon; Infrared spectroscopy; Silicon

Indexed keywords

ANNEALING; INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

EID: 0031074333     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09267-X     Document Type: Article
Times cited : (14)

References (11)
  • 7
    • 0001548018 scopus 로고
    • T.S. Moss (ed.), Elsevier, Amsterdam, chapter 21
    • G. Davies and R.C. Newman, in T.S. Moss (ed.), Handbook on Semiconductors, Vol. 3B, Elsevier, Amsterdam, 1994, chapter 21, p. 1557.
    • (1994) Handbook on Semiconductors , vol.3 B , pp. 1557
    • Davies, G.1    Newman, R.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.